These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
170 related articles for article (PubMed ID: 9945533)
21. Localization effects, energy relaxation, and electron and hole dispersion in selectively doped n-type AlyGa1-yAs/InxGa1-xAs/GaAs quantum wells. Butov LV; Kulakovskii VD; Andersson TG; Chen ZG Phys Rev B Condens Matter; 1990 Nov; 42(15):9472-9479. PubMed ID: 9995184 [No Abstract] [Full Text] [Related]
22. Effective bond-orbital model for shallow acceptors in GaAs-AlxGa1-xAs quantum wells and superlattices. Einevoll GT; Chang YC Phys Rev B Condens Matter; 1990 Jan; 41(3):1447-1460. PubMed ID: 9993862 [No Abstract] [Full Text] [Related]
23. Photoreflectance study of narrow-well strained-layer InxGa1-xAs/GaAs coupled multiple-quantum-well structures. Pan SH; Shen H; Hang Z; Pollak FH; Zhuang W; Xu Q; Roth AP; Masut RA; Lacelle C; Morris D Phys Rev B Condens Matter; 1988 Aug; 38(5):3375-3382. PubMed ID: 9946680 [No Abstract] [Full Text] [Related]
24. Renormalization effects in the dense electron-hole magnetoplasma of a strained InxGa1-xAs/GaAs single quantum well after picosecond excitation. Dite AF; Kulakovskii VD; Faller F; Forchel A Phys Rev B Condens Matter; 1994 Nov; 50(20):15063-15066. PubMed ID: 9975855 [No Abstract] [Full Text] [Related]
25. Linewidth analysis of the photoluminescence of InxGa1-xAs/GaAs quantum wells (x=0.09, 0.18, 1.0). Patanè A; Polimeni A; Capizzi M; Martelli F Phys Rev B Condens Matter; 1995 Jul; 52(4):2784-2788. PubMed ID: 9981348 [No Abstract] [Full Text] [Related]
26. Intrawell and interwell magnetoexcitons in InxGa1-xAs/GaAs coupled double quantum wells. Dzyubenko AB; Yablonskii AL Phys Rev B Condens Matter; 1996 Jun; 53(24):16355-16364. PubMed ID: 9983474 [No Abstract] [Full Text] [Related]
27. Direct and indirect magnetoexcitons in symmetric InxGa1-xAs/GaAs coupled quantum wells. Butov LV; Zrenner A; Abstreiter G; Petinova AV; Eberl K Phys Rev B Condens Matter; 1995 Oct; 52(16):12153-12157. PubMed ID: 9980358 [No Abstract] [Full Text] [Related]
28. Zeeman splitting of the excitonic recombination in InxGa1-xAs/GaAs single quantum wells. Wimbauer T; Oettinger K; Efros AL; Meyer BK; Brugger H Phys Rev B Condens Matter; 1994 Sep; 50(12):8889-8892. PubMed ID: 9974919 [No Abstract] [Full Text] [Related]
29. Thermally activated carrier escape mechanisms from InxGa1-xAs/GaAs quantum wells. Botha JR; Leitch AW Phys Rev B Condens Matter; 1994 Dec; 50(24):18147-18152. PubMed ID: 9976247 [No Abstract] [Full Text] [Related]
30. Exciton recombination dynamics in InxGa1-xAs/GaAs quantum wells. Yu H; Roberts C; Murray R Phys Rev B Condens Matter; 1995 Jul; 52(3):1493-1496. PubMed ID: 9981203 [No Abstract] [Full Text] [Related]
31. Pressure dependence of the photoluminescence of strained (001) and (111) InxGa1-xAs quantum wells. Sly JL; Dunstan DJ Phys Rev B Condens Matter; 1996 Apr; 53(15):10116-10120. PubMed ID: 9982577 [No Abstract] [Full Text] [Related]
34. Exciton localization in InxGa1-xAs/GaAs quantum wells observed by temperature-modulated photoluminescence. Gal M; Xu ZY; Green F; Usher BF Phys Rev B Condens Matter; 1991 Jan; 43(2):1546-1550. PubMed ID: 9997404 [No Abstract] [Full Text] [Related]
35. Light- and heavy-hole free-exciton transitions in narrow InxGa1-xAs/GaAs quantum wells. Reynolds DC; Evans KR; Stutz CE; Jogai B; Wie CR; Yu PW Phys Rev B Condens Matter; 1992 May; 45(19):11156-11160. PubMed ID: 10001037 [No Abstract] [Full Text] [Related]
36. Direct observation of above-barrier quasibound states in InxGa1-xAs/AlAs/GaAs quantum wells. Lee CD; Son JS; Leem JY; Noh SK; Lee KS; Lee C; Hwang IS; Park HY Phys Rev B Condens Matter; 1996 Jul; 54(3):1541-1544. PubMed ID: 9985993 [No Abstract] [Full Text] [Related]
37. Zeeman splitting and g factor of heavy-hole excitons in InxGa1-xAs/GaAs quantum wells. Traynor NJ; Harley RT; Warburton RJ Phys Rev B Condens Matter; 1995 Mar; 51(11):7361-7364. PubMed ID: 9977313 [No Abstract] [Full Text] [Related]
38. Influence of exciton localization on recombination line shapes: InxGa1-xAs/GaAs quantum wells as a model. Schnabel RF; Zimmermann R; Bimberg D; Nickel H; Lösch R; Schlapp W Phys Rev B Condens Matter; 1992 Oct; 46(15):9873-9876. PubMed ID: 10002817 [No Abstract] [Full Text] [Related]
39. Normalized reflection spectra in GaAs/InxGa1-xAs single quantum wells: Structure characterizations and excitonic properties. D'Andrea A; Tomassini N; Ferrari L; Righini M; Selci S; Bruni MR; Simeone MG; Gambacorti N Phys Rev B Condens Matter; 1995 Oct; 52(15):10713-10716. PubMed ID: 9980151 [No Abstract] [Full Text] [Related]
40. Interdiffusion process in lattice-matched InxGa1-xAsyP1-y/InP and GaAs/AlxGa1-xAs quantum wells. Mukai K; Sugawara M; Yamazaki S Phys Rev B Condens Matter; 1994 Jul; 50(4):2273-2282. PubMed ID: 9976444 [No Abstract] [Full Text] [Related] [Previous] [Next] [New Search]