These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
115 related articles for article (PubMed ID: 9948960)
1. Symmetry of conduction states for GaAs-AlAs type-II superlattices under uniaxial stress. Lefebvre P; Gil B; Mathieu H; Planel R Phys Rev B Condens Matter; 1989 Mar; 39(8):5550-5553. PubMed ID: 9948960 [No Abstract] [Full Text] [Related]
2. Uniaxial-stress investigation of the phonon-assisted recombination mechanisms associated with the X states in type-II GaAs/AlAs superlattices. Tribe WR; Klipstein PC; Smith GW; Grey R Phys Rev B Condens Matter; 1996 Sep; 54(12):8721-8727. PubMed ID: 9984550 [No Abstract] [Full Text] [Related]
3. Electronic states in GaAs-AlAs lateral-surface superlattices produced by deposition of AlAs and GaAs fractional layers on (001) vicinal GaAs substrates. Sun H Phys Rev B Condens Matter; 1992 Nov; 46(19):12371-12376. PubMed ID: 10003151 [No Abstract] [Full Text] [Related]
4. Layer ordering and faulting in (GaAs)n/(AlAs)n ultrashort-period superlattices. Li JH; Moss SC; Zhang Y; Mascarenhas A; Pfeiffer LN; West KW; Ge WK; Bai J Phys Rev Lett; 2003 Sep; 91(10):106103. PubMed ID: 14525495 [TBL] [Abstract][Full Text] [Related]
5. Conduction-band minimum of (GaAs)1/(AlAs)1 superlattices: Relationship to X minimum of AlAs. Ge W; Schmidt WD; Sturge MD; Pfeiffer LN; West KW Phys Rev B Condens Matter; 1991 Aug; 44(7):3432-3435. PubMed ID: 9999961 [No Abstract] [Full Text] [Related]
6. Identity of the conduction-band minimum in (AlAs)1/(GaAs)1 (001) superlattices: Intermixing-induced reversal of states. Laks DB; Zunger A Phys Rev B Condens Matter; 1992 May; 45(19):11411-11414. PubMed ID: 10001083 [No Abstract] [Full Text] [Related]
7. Uniaxial-stress determination of the symmetry of excitons associated with the miniband dispersion in (Ga,In)As-GaAs superlattices. Boring P; Jancu JM; Gil B; Bertho D; Jouanin C; Moore KJ Phys Rev B Condens Matter; 1992 Aug; 46(8):4764-4768. PubMed ID: 10004236 [No Abstract] [Full Text] [Related]
8. Biexciton formation in GaAs/AlAs type-II superlattices under extremely low excitation powers. Nakayama M; Suyama K; Nishimura H Phys Rev B Condens Matter; 1995 Mar; 51(12):7870-7873. PubMed ID: 9977373 [No Abstract] [Full Text] [Related]
9. Type-I-type-II transition of GaAs/AlAs short-period superlattices investigated by photoluminescence spectroscopy under hydrostatic pressure. Li G; Jiang D; Han H; Wang Z; Ploog K Phys Rev B Condens Matter; 1989 Nov; 40(15):10430-10435. PubMed ID: 9991590 [No Abstract] [Full Text] [Related]
10. A comparative study of low energy radiation response of AlAs, GaAs and GaAs/AlAs superlattice and the damage effects on their electronic structures. Jiang M; Xiao HY; Peng SM; Yang GX; Liu ZJ; Zu XT Sci Rep; 2018 Jan; 8(1):2012. PubMed ID: 29386543 [TBL] [Abstract][Full Text] [Related]
11. Luminescence dynamics in type-II GaAs/AlAs superlattices near the type-I to type-II crossover. Langbein W; Kalt H; Hvam JM Phys Rev B Condens Matter; 1996 Nov; 54(20):14589-14594. PubMed ID: 9985466 [No Abstract] [Full Text] [Related]
12. Type-I-type-II transition in ultra-short-period GaAs/AlAs superlattices. Cingolani R; Baldassarre L; Ferrara M; Lugar M; Ploog K Phys Rev B Condens Matter; 1989 Sep; 40(9):6101-6107. PubMed ID: 9992677 [No Abstract] [Full Text] [Related]