These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

150 related articles for article (PubMed ID: 9974892)

  • 1. Electric-field-induced Gamma -X mixing between Stark ladders in short-period GaAs/AlAs superlattices.
    Morifuji M; Yamaguchi M; Taniguchi K; Hamaguchi C
    Phys Rev B Condens Matter; 1994 Sep; 50(12):8722-8726. PubMed ID: 9974892
    [No Abstract]   [Full Text] [Related]  

  • 2. A High-Throughput Study of the Electronic Structure and Physical Properties of Short-Period (GaAs)
    Liu QL; Zhao ZY; Yi JH; Zhang ZY
    Nanomaterials (Basel); 2018 Sep; 8(9):. PubMed ID: 30201917
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Indirect-direct anticrossing in GaAs-AlAs superlattices induced by an electric field: Evidence of Gamma -X mixing.
    Meynadier M; Nahory RE; Worlock JM; Tamargo MC; de Miguel JL ; Sturge MD
    Phys Rev Lett; 1988 Mar; 60(13):1338-1341. PubMed ID: 10038009
    [No Abstract]   [Full Text] [Related]  

  • 4. Wannier-Stark localization of X and Gamma states in GaAs-AlAs short-period superlattices.
    Whittaker DM; Skolnick MS; Smith GW; Whitehouse CR
    Phys Rev B Condens Matter; 1990 Aug; 42(6):3591-3598. PubMed ID: 9995873
    [No Abstract]   [Full Text] [Related]  

  • 5. Phonon coupling and X- Gamma mixing in GaAs-AlAs short-period superlattices.
    Skolnick MS; Smith GW; Spain IL; Whitehouse CR; Herbert DC; Whittaker DM; Reed LJ
    Phys Rev B Condens Matter; 1989 May; 39(15):11191-11194. PubMed ID: 9947944
    [No Abstract]   [Full Text] [Related]  

  • 6. Layer ordering and faulting in (GaAs)n/(AlAs)n ultrashort-period superlattices.
    Li JH; Moss SC; Zhang Y; Mascarenhas A; Pfeiffer LN; West KW; Ge WK; Bai J
    Phys Rev Lett; 2003 Sep; 91(10):106103. PubMed ID: 14525495
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Gamma -X mixing in GaAs/AlxGa1-xAs and AlxGa1-xAs/AlAs superlattices.
    Ting DZ; Chang YC
    Phys Rev B Condens Matter; 1987 Sep; 36(8):4359-4374. PubMed ID: 9943415
    [No Abstract]   [Full Text] [Related]  

  • 8. Gamma -X mixing effect in GaAs/AlAs superlattices and heterojunctions.
    Xia JB
    Phys Rev B Condens Matter; 1990 Feb; 41(5):3117-3122. PubMed ID: 9994087
    [No Abstract]   [Full Text] [Related]  

  • 9. Franz-Keldysh oscillations and Wannier-Stark localization in GaAs/AlAs superlattices with single-monolayer AlAs barriers.
    Schneider H; Fischer A; Ploog K
    Phys Rev B Condens Matter; 1992 Mar; 45(11):6329-6332. PubMed ID: 10000392
    [No Abstract]   [Full Text] [Related]  

  • 10. Gamma -X mixing effects on pseudodirect exciton transitions in GaAs/AlAs type-II superlattices.
    Nakayama M; Imazawa K; Suyama K; Tanaka I; Nishimura H
    Phys Rev B Condens Matter; 1994 May; 49(19):13564-13570. PubMed ID: 10010293
    [No Abstract]   [Full Text] [Related]  

  • 11. Stark-ladder transitions and their oscillator strengths in GaAs/AlAs superlattices.
    Kawashima K; Yamamoto T; Kobayashi K; Fujiwara K
    Phys Rev B Condens Matter; 1993 Apr; 47(15):9921-9924. PubMed ID: 10005073
    [No Abstract]   [Full Text] [Related]  

  • 12. Coexistence of Wannier-Stark transitions and miniband Franz-Keldysh oscillations in strongly coupled GaAs-AlAs superlattices.
    Schmidt KH; Linder N; Döhler GH; Grahn HT; Ploog K; Schneider H
    Phys Rev Lett; 1994 Apr; 72(17):2769-2772. PubMed ID: 10055972
    [No Abstract]   [Full Text] [Related]  

  • 13. Tunneling escape time of electrons from the quasibound Stark localized states in ultrathin barrier GaAs/AlAs superlattices.
    Fujiwara K; Kawashima K; Imanishi T
    Phys Rev B Condens Matter; 1996 Dec; 54(24):17724-17729. PubMed ID: 9985901
    [No Abstract]   [Full Text] [Related]  

  • 14. Pressure-induced momentum mixing in GaAs-AlAs superlattices.
    Brown LD; Jaros M
    Phys Rev B Condens Matter; 1989 Nov; 40(15):10625-10628. PubMed ID: 9991617
    [No Abstract]   [Full Text] [Related]  

  • 15. Formation times of electric-field domains in doped GaAs-AlAs superlattices.
    Kastrup J; Prengel F; Grahn HT; Ploog K; Schöll E
    Phys Rev B Condens Matter; 1996 Jan; 53(3):1502-1506. PubMed ID: 9983612
    [No Abstract]   [Full Text] [Related]  

  • 16. Time-resolved photoluminescence investigations of electric-field domain formation in GaAs-AlAs superlattices.
    Klann R; Kwok SH; Grahn HT; Hey R
    Phys Rev B Condens Matter; 1995 Sep; 52(12):R8680-R8683. PubMed ID: 9979925
    [No Abstract]   [Full Text] [Related]  

  • 17. Electronic states in GaAs-AlAs lateral-surface superlattices produced by deposition of AlAs and GaAs fractional layers on (001) vicinal GaAs substrates.
    Sun H
    Phys Rev B Condens Matter; 1992 Nov; 46(19):12371-12376. PubMed ID: 10003151
    [No Abstract]   [Full Text] [Related]  

  • 18. Critical electric field for Stark-ladder formation in a GaAs/AlAs superlattice.
    Tanaka I; Nakayama M; Nishimura H; Kawashima K; Fujiwara K
    Phys Rev B Condens Matter; 1993 Jul; 48(4):2787-2790. PubMed ID: 10008682
    [No Abstract]   [Full Text] [Related]  

  • 19. Virtual optical nonlinearity in GaAs-AlAs superlattices.
    Adderley BM; Morrison I; Jaros M
    Opt Lett; 1991 Dec; 16(24):1927-9. PubMed ID: 19784183
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Resonant Raman scattering in GaAs/AlAs superlattices: The role of electron state mixing.
    Mlayah A; Carles R; Sayari A; Chtourou R; Charfi FF; Planel R
    Phys Rev B Condens Matter; 1996 Feb; 53(7):3960-3965. PubMed ID: 9983948
    [No Abstract]   [Full Text] [Related]  

    [Next]    [New Search]
    of 8.