These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

101 related articles for article (PubMed ID: 9975234)

  • 1. Measurement of the direct energy gap of Al0.5In0.5P: Implications for the band discontinuity at Ga1-xInxP/AlyIn1-yP heterojunctions.
    Dawson MD; Najda SP; Kean AH; Duggan G; Mowbray DJ; Kowalski OP; Skolnick MS; Hopkinson M
    Phys Rev B Condens Matter; 1994 Oct; 50(15):11190-11191. PubMed ID: 9975234
    [No Abstract]   [Full Text] [Related]  

  • 2. Atomic arrangement of spontaneously ordered Al0.5In0.5P/GaAs.
    Kondow M; Kakibayashi H; Minagawa S
    Phys Rev B Condens Matter; 1989 Jul; 40(2):1159-1163. PubMed ID: 9991939
    [No Abstract]   [Full Text] [Related]  

  • 3. Direct mapping of electronic structure across Al0.3Ga0.7As/GaAs heterojunctions: Band offsets, asymmetrical transition widths, and multiple-valley band structures.
    Gwo S; Chao K; Shih CK; Sadra K; Streetman BG
    Phys Rev Lett; 1993 Sep; 71(12):1883-1886. PubMed ID: 10054524
    [No Abstract]   [Full Text] [Related]  

  • 4. Atomic-scale structure of disordered Ga1-xInxP alloys.
    Silverman A; Zunger A; Kalish R; Adler J
    Phys Rev B Condens Matter; 1995 Apr; 51(16):10795-10816. PubMed ID: 9977776
    [No Abstract]   [Full Text] [Related]  

  • 5. Raman study of ordering in Ga1-xInxP.
    Gant TA; Dutta M; El-Masry NA; Bedair SM; Stroscio MA
    Phys Rev B Condens Matter; 1992 Aug; 46(7):3834-3838. PubMed ID: 10004108
    [No Abstract]   [Full Text] [Related]  

  • 6. Ordering thermodynamics of surface and subsurface layers in the Ga1-xInxP alloy.
    Osório R; Bernard JE; Froyen S; Zunger A
    Phys Rev B Condens Matter; 1992 May; 45(19):11173-11191. PubMed ID: 10001040
    [No Abstract]   [Full Text] [Related]  

  • 7. Electronic structure and density of states of the random Al0.5Ga0.5As, GaAs0.5P0.5, and Ga0.5In0.5As semiconductor alloys.
    Magri R; Froyen S; Zunger A
    Phys Rev B Condens Matter; 1991 Oct; 44(15):7947-7964. PubMed ID: 9998726
    [No Abstract]   [Full Text] [Related]  

  • 8. Valence-band splitting in ordered Ga0.5In0.5P studied by temperature-dependent photoluminescence polarization.
    Kanata T; Nishimoto M; Nakayama H; Nishino T
    Phys Rev B Condens Matter; 1992 Mar; 45(12):6637-6642. PubMed ID: 10000424
    [No Abstract]   [Full Text] [Related]  

  • 9. Valence-band splitting in ordered Ga0.5In0.5P measured by polarized photoluminescence excitation spectroscopy.
    Mowbray DJ; Hogg RA; Skolnick MS; DeLong MC; Kurtz SR; Olson JM
    Phys Rev B Condens Matter; 1992 Sep; 46(11):7232-7235. PubMed ID: 10002441
    [No Abstract]   [Full Text] [Related]  

  • 10. Experimental determination of the GaAs and Ga1-xAlxAs band-gap energy dependence on temperature and aluminum mole fraction in the direct band-gap region.
    El Allali M ; Sorensen CB; Veje E; Tidemand-Petersson P
    Phys Rev B Condens Matter; 1993 Aug; 48(7):4398-4404. PubMed ID: 10008912
    [No Abstract]   [Full Text] [Related]  

  • 11. Band offsets of Ga0.5In0.5P/GaAs single quantum wells from pressure-induced type-II transitions.
    Leroux M; Fille ML; Gil B; Landesman JP; Garcia JC
    Phys Rev B Condens Matter; 1993 Mar; 47(11):6465-6469. PubMed ID: 10004614
    [No Abstract]   [Full Text] [Related]  

  • 12. Room-temperature yellow-orange (In,Ga,Al)P-GaP laser diodes grown on (n11) GaAs substrates.
    Ledentsov NN; Shchukin VA; Shernyakov YM; Kulagina MM; Payusov AS; Gordeev NY; Maximov MV; Zhukov AE; Denneulin T; Cherkashin N
    Opt Express; 2018 May; 26(11):13985-13994. PubMed ID: 29877443
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Density-dependent band-gap renormalization of one-component plasma in GaxIn1-xAs/AlyIn1-yAs single quantum wells.
    Zhang YH; Cingolani R; Ploog K
    Phys Rev B Condens Matter; 1991 Sep; 44(11):5958-5961. PubMed ID: 9998454
    [No Abstract]   [Full Text] [Related]  

  • 14. Magnetophonon resonance under hydrostatic pressure in GaAs-Al0.28Ga0.72As and Ga0.47In0.53As-Al0.48In0.52As heterojunctions.
    Grégoris G; Beerens J; Ben Amor S ; Dmowski L; Portal JC; Alexandre F; Sivco DL; Cho AY
    Phys Rev B Condens Matter; 1988 Jan; 37(3):1262-1272. PubMed ID: 9944634
    [No Abstract]   [Full Text] [Related]  

  • 15. Experimental determination of the conduction-band offset at GaAs/Ga1-xAlxAs heterojunctions with the use of ballistic electrons.
    Forchhammer T; Veje E; Tidemand-Petersson P
    Phys Rev B Condens Matter; 1995 Nov; 52(20):14693-14698. PubMed ID: 9980805
    [No Abstract]   [Full Text] [Related]  

  • 16. Narrowband optical parametric amplification measurements in Ga0.5In0.5P photonic crystal waveguides.
    Willinger A; Roy S; Santagiustina M; Combrié S; De Rossi A; Eisenstein G
    Opt Express; 2015 Jul; 23(14):17751-7. PubMed ID: 26191837
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Boosting the Visible-Light Photoactivity of BiOCl/BiVO
    Zhu M; Liu Q; Chen W; Yin Y; Ge L; Li H; Wang K
    ACS Appl Mater Interfaces; 2017 Nov; 9(44):38832-38841. PubMed ID: 29043765
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Anisotropic photocurrent response at black phosphorus-MoS2 p-n heterojunctions.
    Hong T; Chamlagain B; Wang T; Chuang HJ; Zhou Z; Xu YQ
    Nanoscale; 2015 Nov; 7(44):18537-41. PubMed ID: 26489362
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Spontaneous surface-induced long-range order in Ga0.5In0.5P alloys.
    Bernard JE; Froyen S; Zunger A
    Phys Rev B Condens Matter; 1991 Nov; 44(20):11178-11195. PubMed ID: 9999238
    [No Abstract]   [Full Text] [Related]  

  • 20. Higher-interband electroreflectance of long-range ordered Ga0.5In0.5P.
    Kita T; Yamashita K; Nishino T
    Phys Rev B Condens Matter; 1996 Dec; 54(23):16714-16718. PubMed ID: 9985800
    [No Abstract]   [Full Text] [Related]  

    [Next]    [New Search]
    of 6.