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33. Light-induced change in defect-band photoluminescence of doped hydrogenated amorphous silicon. Qiu C; Pankove JI Phys Rev B Condens Matter; 1990 Jun; 41(18):12744-12749. PubMed ID: 9993751 [No Abstract] [Full Text] [Related]
34. Hydrogen-mediated model for defect metastability in hydrogenated amorphous silicon. Zafar S; Schiff EA Phys Rev B Condens Matter; 1989 Sep; 40(7):5235-5238. PubMed ID: 9992539 [No Abstract] [Full Text] [Related]
35. Erratum: Defect formation during growth of hydrogenated amorphous silicon. Ganguly G; Matsuda A Phys Rev B Condens Matter; 1993 Jul; 48(3):2025. PubMed ID: 10008591 [No Abstract] [Full Text] [Related]
36. Defect dynamics and the Staebler-Wronski effect in hydrogenated amorphous silicon. Pantelides ST Phys Rev B Condens Matter; 1987 Aug; 36(6):3479-3482. PubMed ID: 9943272 [No Abstract] [Full Text] [Related]
37. Defect-pool model and the hydrogen density of states in hydrogenated amorphous silicon. Powell MJ; Deane SC Phys Rev B Condens Matter; 1996 Apr; 53(15):10121-10132. PubMed ID: 9982578 [No Abstract] [Full Text] [Related]
38. Defect formation during growth of hydrogenated amorphous silicon. Ganguly G; Matsuda A Phys Rev B Condens Matter; 1993 Feb; 47(7):3661-3670. PubMed ID: 10006467 [No Abstract] [Full Text] [Related]
39. Theory of defect formation in the glow-discharge deposition of phosphorus-doped hydrogenated amorphous silicon. Kampas FJ; Vanier PE Phys Rev B Condens Matter; 1985 Mar; 31(6):3654-3658. PubMed ID: 9936260 [No Abstract] [Full Text] [Related]