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17. Electronic states in GaAs-AlAs lateral-surface superlattices produced by deposition of AlAs and GaAs fractional layers on (001) vicinal GaAs substrates. Sun H Phys Rev B Condens Matter; 1992 Nov; 46(19):12371-12376. PubMed ID: 10003151 [No Abstract] [Full Text] [Related]
18. Ab Initio calculations of the anisotropic dielectric tensor of GaAs/AlAs superlattices. Botti S; Vast N; Reining L; Olevano V; Andreani LC Phys Rev Lett; 2002 Nov; 89(21):216803. PubMed ID: 12443441 [TBL] [Abstract][Full Text] [Related]
19. Anisotropy of the confined hole states in a (311)A AlAs/GaAs/AlAs quantum-well system: Evidence for a camel's-back band structure. Hayden RK; Valadares EC; Henini M; Eaves L; Maude DK; Portal JC Phys Rev B Condens Matter; 1992 Dec; 46(23):15586-15589. PubMed ID: 10003696 [No Abstract] [Full Text] [Related]
20. Optical evidence of the direct-to-indirect-gap transition in GaAs-AlAs short-period superlattices. Danan G; Etienne B; Mollot F; Planel R; Jean-Louis AM; Alexandre F; Jusserand B; Le Roux G ; Marzin JY; Savary H; Sermage B Phys Rev B Condens Matter; 1987 Apr; 35(12):6207-6212. PubMed ID: 9940852 [No Abstract] [Full Text] [Related] [Next] [New Search]