These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

100 related articles for article (PubMed ID: 9978813)

  • 1. Interfaces, confinement, and resonant Raman scattering in Ge/Si quantum wells.
    Brafman O; Araújo Silva MA ; Cerdeira F; Manor R; Bean JC
    Phys Rev B Condens Matter; 1995 Jun; 51(24):17800-17805. PubMed ID: 9978813
    [No Abstract]   [Full Text] [Related]  

  • 2. Quantum-confined direct band transitions in tensile strained Ge/SiGe quantum wells on silicon substrates.
    Chen Y; Li C; Lai H; Chen S
    Nanotechnology; 2010 Mar; 21(11):115207. PubMed ID: 20179329
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Strong confinement-induced engineering of the g factor and lifetime of conduction electron spins in Ge quantum wells.
    Giorgioni A; Paleari S; Cecchi S; Vitiello E; Grilli E; Isella G; Jantsch W; Fanciulli M; Pezzoli F
    Nat Commun; 2016 Dec; 7():13886. PubMed ID: 28000670
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Raman scattering by confined optical phonons in Si and Ge nanostructures.
    Alfaro P; Cisneros R; Bizarro M; Cruz-Irisson M; Wang C
    Nanoscale; 2011 Mar; 3(3):1246-51. PubMed ID: 21270988
    [TBL] [Abstract][Full Text] [Related]  

  • 5. A Pathway to Type-I Band Alignment in Ge/Si Core-Shell Nanowires.
    Kim J; Lee JH; Hong KH
    J Phys Chem Lett; 2013 Jan; 4(1):121-6. PubMed ID: 26291223
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Production of three-dimensional quantum dot lattice of Ge/Si core-shell quantum dots and Si/Ge layers in an alumina glass matrix.
    Buljan M; Radić N; Sancho-Paramon J; Janicki V; Grenzer J; Bogdanović-Radović I; Siketić Z; Ivanda M; Utrobičić A; Hübner R; Weidauer R; Valeš V; Endres J; Car T; Jerčinović M; Roško J; Bernstorff S; Holy V
    Nanotechnology; 2015 Feb; 26(6):065602. PubMed ID: 25605224
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Giant anisotropy of Zeeman splitting of quantum confined acceptors in Si/Ge.
    Haendel KM; Winkler R; Denker U; Schmidt OG; Haug RJ
    Phys Rev Lett; 2006 Mar; 96(8):086403. PubMed ID: 16606204
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Design of a Si-based lattice-matched room-temperature GeSn/GeSiSn multi-quantum-well mid-infrared laser diode.
    Sun G; Soref RA; Cheng HH
    Opt Express; 2010 Sep; 18(19):19957-65. PubMed ID: 20940887
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Raman determination of uniformity of multilayer Si/Ge structures with Ge quantum dots.
    Talochkin AB; Cherkov AG
    Nanotechnology; 2009 Aug; 20(34):345702. PubMed ID: 19652280
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Confinement and zone folding in the E1-like optical transitions of Ge/Si quantum wells and superlattices.
    Rodrigues PA; Araújo Silva MA ; Cerdeira F; Bean JC
    Phys Rev B Condens Matter; 1993 Dec; 48(24):18024-18030. PubMed ID: 10008440
    [No Abstract]   [Full Text] [Related]  

  • 11. Microstructure and optical response optimization of Ge/Si quantum dots transformed from the sputtering-grown Ge thin film by manipulating the thermal annealing.
    Shu Q; Wang R; Yang J; Zhang M; Zeng T; Sun T; Wang C; Yang Y
    Nanotechnology; 2018 Mar; 29(9):095601. PubMed ID: 29256868
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Resonant Raman scattering in short-period (Si)n/(Ge)m superlattices.
    Cerdeira F; Alonso MI; Niles D; Garriga M; Cardona M; Kasper E; Kibbel H
    Phys Rev B Condens Matter; 1989 Jul; 40(2):1361-1364. PubMed ID: 9991976
    [No Abstract]   [Full Text] [Related]  

  • 13. Resonant-Raman-scattering study on short-period Si/Ge superlattices.
    Schorer R; Abstreiter G; Kibbel H; Presting H
    Phys Rev B Condens Matter; 1994 Dec; 50(24):18211-18218. PubMed ID: 9976255
    [No Abstract]   [Full Text] [Related]  

  • 14. Clear Experimental Demonstration of Hole Gas Accumulation in Ge/Si Core-Shell Nanowires.
    Fukata N; Yu M; Jevasuwan W; Takei T; Bando Y; Wu W; Wang ZL
    ACS Nano; 2015 Dec; 9(12):12182-8. PubMed ID: 26554299
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Fabrication of multilayered Ge nanocrystals by magnetron sputtering and annealing.
    Gao F; Green MA; Conibeer G; Cho EC; Huang Y; Pere-Wurfl I; Flynn C
    Nanotechnology; 2008 Nov; 19(45):455611. PubMed ID: 21832788
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Electroluminescence of GeSn/Ge MQW LEDs on Si substrate.
    Schwartz B; Oehme M; Kostecki K; Widmann D; Gollhofer M; Koerner R; Bechler S; Fischer IA; Wendav T; Kasper E; Schulze J; Kittler M
    Opt Lett; 2015 Jul; 40(13):3209-12. PubMed ID: 26125404
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Localized electronic states and resonant Raman scattering from localized and quasiresonant phonons in Si-Ge layers.
    Tsang JC; Iyer SS; Calise JA; Ek BA
    Phys Rev B Condens Matter; 1989 Sep; 40(8):5886-5889. PubMed ID: 9992648
    [No Abstract]   [Full Text] [Related]  

  • 18. Promising features of low-temperature grown Ge nanostructures on Si(001) substrates.
    Wang Z; Wang S; Yin Y; Liu T; Lin D; Li DH; Yang X; Jiang Z; Zhong Z
    Nanotechnology; 2017 Mar; 28(11):115701. PubMed ID: 28140355
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Metal-insulator transition and orbital reconstruction in Mott-type quantum wells made of NdNiO3.
    Liu J; Kareev M; Meyers D; Gray B; Ryan P; Freeland JW; Chakhalian J
    Phys Rev Lett; 2012 Sep; 109(10):107402. PubMed ID: 23005325
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Quantum-confined Stark effect at 1.3 μm in Ge/Si(0.35)Ge(0.65) quantum-well structure.
    Rouifed MS; Chaisakul P; Marris-Morini D; Frigerio J; Isella G; Chrastina D; Edmond S; Le Roux X; Coudevylle JR; Vivien L
    Opt Lett; 2012 Oct; 37(19):3960-2. PubMed ID: 23027245
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 5.