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2. Electron-drift-mobility measurements and exponential conduction-band tails in hydrogenated amorphous silicon-germanium alloys. Wang Q; Antoniadis H; Schiff EA; Guha S Phys Rev B Condens Matter; 1993 Apr; 47(15):9435-9448. PubMed ID: 10005010 [No Abstract] [Full Text] [Related]
3. Anisotropic drift mobility in hydrogenated amorphous silicon. Parker MA; Schiff EA Phys Rev B Condens Matter; 1988 Jun; 37(17):10426-10428. PubMed ID: 9944493 [No Abstract] [Full Text] [Related]
4. Electron-transport parameters and tail-state distribution in hydrogenated amorphous silicon obtained from position and tail-state matrix simulation of drift experiments. Vanderhaghen R Phys Rev B Condens Matter; 1988 Nov; 38(15):10755-10775. PubMed ID: 9945932 [No Abstract] [Full Text] [Related]
5. Isotropy of drift mobilities in hydrogenated amorphous silicon. Antoniadis H; Schiff EA Phys Rev B Condens Matter; 1991 Aug; 44(8):3627-3637. PubMed ID: 9999990 [No Abstract] [Full Text] [Related]
6. Nonlinear photocarrier drift in hydrogenated amorphous silicon-germanium alloys. Antoniadis H; Schiff EA Phys Rev B Condens Matter; 1991 Jun; 43(17):13957-13966. PubMed ID: 9997263 [No Abstract] [Full Text] [Related]
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9. Ambipolar drift-length measurement in amorphous hydrogenated silicon using the steady-state photocarrier grating technique. Ritter D; Weiser K Phys Rev B Condens Matter; 1986 Dec; 34(12):9031-9033. PubMed ID: 9939649 [No Abstract] [Full Text] [Related]
10. In situ thickness control during plasma deposition of hydrogenated amorphous silicon films by time-resolved microwave conductivity measurements. Neitzert HC; Hirsch W; Kunst M; Nell ME Appl Opt; 1995 Feb; 34(4):676-80. PubMed ID: 20963168 [TBL] [Abstract][Full Text] [Related]
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13. Effect of high-temperature annealing on the optical-absorption edge of hydrogenated amorphous silicon-carbon films. Zhang F; Xue H; Song Z; Guo Y; Chen G Phys Rev B Condens Matter; 1992 Aug; 46(8):4590-4594. PubMed ID: 10004214 [No Abstract] [Full Text] [Related]
14. 29Si nuclear magnetic resonance of amorphous hydrogenated silicon and amorphous microcrystalline mixed-phase hydrogenated silicon. Hayashi S; Hayamizu K; Yamasaki S; Matsuda A; Tanaka K Phys Rev B Condens Matter; 1987 Apr; 35(10):4581-4590. PubMed ID: 9940627 [No Abstract] [Full Text] [Related]
15. Electron drift mobility in doped amorphous silicon. Street RA; Kakalios J; Hack M Phys Rev B Condens Matter; 1988 Sep; 38(8):5603-5609. PubMed ID: 9947001 [No Abstract] [Full Text] [Related]
16. Comment on "Electron drift mobility in doped amorphous silicon". Overhof H; Silver M Phys Rev B Condens Matter; 1989 May; 39(14):10426-10428. PubMed ID: 9947842 [No Abstract] [Full Text] [Related]
17. Temperature dependence of the electron drift mobility in doped and undoped amorphous silicon. Sharma DK; Narasimhan KL; Periasamy N; Bapat DR Phys Rev B Condens Matter; 1991 Dec; 44(23):12806-12808. PubMed ID: 9999457 [No Abstract] [Full Text] [Related]
18. Cody disorder: Absorption-edge relationships in hydrogenated amorphous silicon. Ravindra NM; Demichelis F Phys Rev B Condens Matter; 1985 Nov; 32(10):6591-6595. PubMed ID: 9936764 [No Abstract] [Full Text] [Related]