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2. Band structure and electro-optical properties of mixed type-I/type-II InxGa1-xAs/InyGa1-yAs superlattices. Schwedler R; Ziebell A; Brüggemann F; Opitz B; Kohl A; Kurz H Phys Rev B Condens Matter; 1995 Oct; 52(16):12108-12119. PubMed ID: 9980353 [No Abstract] [Full Text] [Related]
3. Yellow-red light-emitting diodes using periodic Ga-flow interruption during deposition of InGaN well. Lee K; Lee H; Lee CR; Chung TH; Kim YS; Leem JY; Jeong KU; Kim JS Opt Express; 2017 Jun; 25(13):15152-15160. PubMed ID: 28788945 [TBL] [Abstract][Full Text] [Related]
4. Magneto-optical studies of strain effects on the excitons in InxGa1-xAs/AlyGa1-yAs strained quantum wells. Zhou W; Dutta M; Smith DD; Pamulapati J; Shen H; Newman P; Sacks R Phys Rev B Condens Matter; 1993 Aug; 48(8):5256-5260. PubMed ID: 10009041 [No Abstract] [Full Text] [Related]
5. Electro-optical effects in InxGa1-xAs/GaAs strained-layer superlattices. Fortin E; Hua BY; Roth AP Phys Rev B Condens Matter; 1989 May; 39(15):10887-10891. PubMed ID: 9947899 [No Abstract] [Full Text] [Related]
6. Optical investigation of a new type of valence-band configuration in InxGa1-xAs-GaAs strained superlattices. Marzin J; Charasse MN; Sermage B Phys Rev B Condens Matter; 1985 Jun; 31(12):8298-8301. PubMed ID: 9935794 [No Abstract] [Full Text] [Related]
7. Erratum: Band offsets for strained InxGa1-xAs/AlyGa1-yAs heterointerfaces. Arent DJ Phys Rev B Condens Matter; 1990 Sep; 42(8):5361. PubMed ID: 10021536 [No Abstract] [Full Text] [Related]
8. Band offsets for strained InxGa1-xAs/AlyGa1-yAs heterointerfaces. Arent DJ Phys Rev B Condens Matter; 1990 May; 41(14):9843-9849. PubMed ID: 9993364 [No Abstract] [Full Text] [Related]
9. Influence of the spin-orbit split-off valence band in InxGa1-xAs/AlyGa1-yAs strained-layer quantum wells. Gil B; Howard LK; Dunstan DJ; Boring P; Lefebvre P Phys Rev B Condens Matter; 1992 Feb; 45(7):3906-3909. PubMed ID: 10001995 [No Abstract] [Full Text] [Related]
10. Carrier-gain dynamics in InxGa1-xAs/AlyGa1-yAs strained-layer single-quantum-well diode lasers: Comparison of theory and experiment. Sanders GD; Sun C; Fujimoto JG; Choi HK; Wang CA; Stanton CJ Phys Rev B Condens Matter; 1994 Sep; 50(12):8539-8558. PubMed ID: 9974872 [No Abstract] [Full Text] [Related]
11. Miniband structure in InxGa1-xAs-GaAs strained-layer superlattices. Pulsford NJ; Nicholas RJ; Warburton RJ; Duggan G; Moore KJ; Woodbridge K; Roberts C Phys Rev B Condens Matter; 1991 Jan; 43(3):2246-2254. PubMed ID: 9997498 [No Abstract] [Full Text] [Related]
12. Structure of InxGa1-xAs/GaAs strained-layer superlattices. Cui SF; Wang GM; Mai ZH; Feng W; Zhou JM Phys Rev B Condens Matter; 1993 Sep; 48(12):8797-8800. PubMed ID: 10007095 [No Abstract] [Full Text] [Related]
13. Energy levels of strained InxGa1-xAs-GaAs superlattices. Jogai B; Yu PW Phys Rev B Condens Matter; 1990 Jun; 41(18):12650-12658. PubMed ID: 9993740 [No Abstract] [Full Text] [Related]
14. Electron mobilities in modulation-doped AlxGa1-xAs/GaAs and pseudomorphic AlxGa1-xAs/InyGa1-yAs quantum-well structures. Inoue K; Matsuno T Phys Rev B Condens Matter; 1993 Feb; 47(7):3771-3778. PubMed ID: 10006481 [No Abstract] [Full Text] [Related]
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19. Effect of biaxial strain on acceptor-level energies in InyGa1-yAs/AlxGa1-xAs (on GaAs) quantum wells. Loehr JP; Singh J Phys Rev B Condens Matter; 1990 Feb; 41(6):3695-3701. PubMed ID: 9994170 [No Abstract] [Full Text] [Related]
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