These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

142 related articles for article (PubMed ID: 9985242)

  • 1. Influence of the kinetic energy of electrons on the formation of excitons in a shallow InxGa1-xAs/GaAs quantum well.
    Kovac J; Schweizer H; Pilkuhn MH; Nickel H
    Phys Rev B Condens Matter; 1996 Nov; 54(19):13440-13443. PubMed ID: 9985242
    [No Abstract]   [Full Text] [Related]  

  • 2. Direct coupling of heavy-hole free excitons in InxGa1-xAs/GaAs quantum wells with free excitons in the GaAs barrier.
    Reynolds DC; Evans KR; Bajaj KK; Jogai B; Stutz CE; Yu PW
    Phys Rev B Condens Matter; 1991 Jan; 43(2):1871-1874. PubMed ID: 9997454
    [No Abstract]   [Full Text] [Related]  

  • 3. Binding energies and envelope functions of light-hole excitons in GaAs/InxGa1-xAs/GaAs strained quantum wells.
    Piao ZS; Nakayama M; Nishimura H
    Phys Rev B Condens Matter; 1996 Oct; 54(15):10312-10315. PubMed ID: 9984811
    [No Abstract]   [Full Text] [Related]  

  • 4. Binding energy of shallow acceptors in InxGa1-xAs/GaAs strained quantum wells.
    Roth AP; Morris D; Masut RA; Lacelle C; Jackman JA
    Phys Rev B Condens Matter; 1988 Oct; 38(11):7877-7880. PubMed ID: 9945533
    [No Abstract]   [Full Text] [Related]  

  • 5. Zeeman splitting and g factor of heavy-hole excitons in InxGa1-xAs/GaAs quantum wells.
    Traynor NJ; Harley RT; Warburton RJ
    Phys Rev B Condens Matter; 1995 Mar; 51(11):7361-7364. PubMed ID: 9977313
    [No Abstract]   [Full Text] [Related]  

  • 6. Dynamics of Trion formation in InxGa1-xAs quantum wells.
    Portella-Oberli MT; Berney J; Kappei L; Morier-Genoud F; Szczytko J; Deveaud-Plédran B
    Phys Rev Lett; 2009 Mar; 102(9):096402. PubMed ID: 19392539
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Exciton mixing in the magnetophotoluminescence excitation spectra of shallow strained InxGa1-xAs/GaAs quantum wells.
    Kulakovskii VD; Forchel A; Pieger K; Straka J; Shepel BN; Nochevny SV
    Phys Rev B Condens Matter; 1994 Sep; 50(11):7467-7473. PubMed ID: 9974727
    [No Abstract]   [Full Text] [Related]  

  • 8. Effect of a magnetic field on the photoluminescence from InxGa1-xAs/GaAs and GaAs/AlxGa1-xAs quantum wells.
    Reynolds DC; Evans KR; Stutz CE; Yu PW
    Phys Rev B Condens Matter; 1991 Feb; 43(5):4244-4248. PubMed ID: 9997775
    [No Abstract]   [Full Text] [Related]  

  • 9. Fabrication of GaAs, In
    Park JP; Lee JJ; Kim SW
    J Am Chem Soc; 2016 Dec; 138(51):16568-16571. PubMed ID: 27976877
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Exciton binding energy in InxGa1-xAs/GaAs strained quantum wells.
    Hou HQ; Segawa Y; Aoyagi Y; Namba S; Zhou JM
    Phys Rev B Condens Matter; 1990 Jul; 42(2):1284-1289. PubMed ID: 9995539
    [No Abstract]   [Full Text] [Related]  

  • 11. Influence of barrier height on carrier dynamics in strained InxGa1-xAs/GaAs quantum wells.
    Bacher G; Schweizer H; Kovac J; Forchel A; Nickel H; Schlapp W; Lösch R
    Phys Rev B Condens Matter; 1991 Apr; 43(11):9312-9315. PubMed ID: 9996615
    [No Abstract]   [Full Text] [Related]  

  • 12. Influence of exciton localization on recombination line shapes: InxGa1-xAs/GaAs quantum wells as a model.
    Schnabel RF; Zimmermann R; Bimberg D; Nickel H; Lösch R; Schlapp W
    Phys Rev B Condens Matter; 1992 Oct; 46(15):9873-9876. PubMed ID: 10002817
    [No Abstract]   [Full Text] [Related]  

  • 13. Effects of an electric field on the continuum energy levels in InxGa1-xAs/GaAs quantum wells terminated with thin cap layers.
    Fafard S; Fortin E; Roth AP
    Phys Rev B Condens Matter; 1993 Apr; 47(16):10588-10595. PubMed ID: 10005172
    [No Abstract]   [Full Text] [Related]  

  • 14. Localization effects, energy relaxation, and electron and hole dispersion in selectively doped n-type AlyGa1-yAs/InxGa1-xAs/GaAs quantum wells.
    Butov LV; Kulakovskii VD; Andersson TG; Chen ZG
    Phys Rev B Condens Matter; 1990 Nov; 42(15):9472-9479. PubMed ID: 9995184
    [No Abstract]   [Full Text] [Related]  

  • 15. Strain effects on the microscopic structure of an InxGa1-xAs epilayer in InxGa1-xAs/GaAs heterostructures: A theoretical study.
    Amore Bonapasta A ; Scavia G
    Phys Rev B Condens Matter; 1994 Jul; 50(4):2671-2674. PubMed ID: 9976494
    [No Abstract]   [Full Text] [Related]  

  • 16. Exciton localization in InxGa1-xAs-GaAs coupled quantum-well structures.
    Moore KJ; Duggan G; Woodbridge K; Roberts C
    Phys Rev B Condens Matter; 1990 Jan; 41(2):1095-1099. PubMed ID: 9993806
    [No Abstract]   [Full Text] [Related]  

  • 17. Photoreflectance study of narrow-well strained-layer InxGa1-xAs/GaAs coupled multiple-quantum-well structures.
    Pan SH; Shen H; Hang Z; Pollak FH; Zhuang W; Xu Q; Roth AP; Masut RA; Lacelle C; Morris D
    Phys Rev B Condens Matter; 1988 Aug; 38(5):3375-3382. PubMed ID: 9946680
    [No Abstract]   [Full Text] [Related]  

  • 18. Exciton dynamics in InxGa1-xAs/GaAs quantum-well heterostructures: Competition between capture and thermal emission.
    Bacher G; Hartmann C; Schweizer H; Held T; Mahler G; Nickel H
    Phys Rev B Condens Matter; 1993 Apr; 47(15):9545-9555. PubMed ID: 10005019
    [No Abstract]   [Full Text] [Related]  

  • 19. Influence of interface localization on the binding energy of acceptor bound excitons in narrow GaAs/AlxGa1-xAs quantum wells.
    Harris CI; Monemar B; Kalt H; Holtz PO; Sundaram M; Merz JL; Gossard AC
    Phys Rev B Condens Matter; 1995 May; 51(19):13221-13225. PubMed ID: 9978121
    [No Abstract]   [Full Text] [Related]  

  • 20. Renormalization effects in the dense electron-hole magnetoplasma of a strained InxGa1-xAs/GaAs single quantum well after picosecond excitation.
    Dite AF; Kulakovskii VD; Faller F; Forchel A
    Phys Rev B Condens Matter; 1994 Nov; 50(20):15063-15066. PubMed ID: 9975855
    [No Abstract]   [Full Text] [Related]  

    [Next]    [New Search]
    of 8.