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8. Electron-phonon interaction and electron scattering by modified confined LO phonons in semiconductor quantum wells. Haupt R; Wendler L Phys Rev B Condens Matter; 1991 Jul; 44(4):1850-1860. PubMed ID: 9999724 [No Abstract] [Full Text] [Related]
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11. Influence of electron temperature and carrier concentration on electron-LO-phonon intersubband scattering in wide GaAs/AlxGa1-xAs quantum wells. Lee S; Galbraith I; Pidgeon CR Phys Rev B Condens Matter; 1995 Jul; 52(3):1874-1881. PubMed ID: 9981255 [No Abstract] [Full Text] [Related]
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15. Terahertz electron-hole recollisions in GaAs/AlGaAs quantum wells: robustness to scattering by optical phonons and thermal fluctuations. Banks H; Zaks B; Yang F; Mack S; Gossard AC; Liu R; Sherwin MS Phys Rev Lett; 2013 Dec; 111(26):267402. PubMed ID: 24483813 [TBL] [Abstract][Full Text] [Related]
16. Doubly resonant LO-phonon Raman scattering via the deformation potential with a single quantum well. Miller RC; Kleinman DA; Tu CW; Sputz SK Phys Rev B Condens Matter; 1986 Nov; 34(10):7444-7446. PubMed ID: 9939419 [No Abstract] [Full Text] [Related]
17. Difference phonon scattering: A Raman excitation in GaAs quantum wells. Liu Y; Sooryakumar R; Koteles ES; Elman B Phys Rev B Condens Matter; 1991 Mar; 43(8):6832-6835. PubMed ID: 9998142 [No Abstract] [Full Text] [Related]
18. Time-resolved Raman scattering of nonequilibrium LO phonons in GaAs quantum wells. Tsen KT; Joshi RP; Ferry DK; Morkoc H Phys Rev B Condens Matter; 1989 Jan; 39(2):1446-1449. PubMed ID: 9948351 [No Abstract] [Full Text] [Related]
19. Interface roughness and homogeneous linewidths in quantum wells and superlattices studied by resonant acoustic-phonon Raman scattering. Ruf T; Spitzer J; Sapega VF; Belitsky VI; Cardona M; Ploog K Phys Rev B Condens Matter; 1994 Jul; 50(3):1792-1806. PubMed ID: 9976369 [No Abstract] [Full Text] [Related]
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