These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

113 related articles for article (PubMed ID: 9986931)

  • 1. Erratum: Effects of band nonparabolicity and central-cell corrections on the spectrum of Si donors in GaAs quantum wells.
    Mueller ER; Larsen DM; Waldman J; Goodhue WD
    Phys Rev B Condens Matter; 1994 Oct; 50(15):11287. PubMed ID: 9986931
    [No Abstract]   [Full Text] [Related]  

  • 2. Effects of band nonparabolicity and central-cell corrections on the spectrum of Si donors in GaAs quantum wells.
    Mueller ER; Larsen DM; Waldman J; Goodhue WD
    Phys Rev B Condens Matter; 1994 May; 49(19):13475-13482. PubMed ID: 10010283
    [No Abstract]   [Full Text] [Related]  

  • 3. Band nonparabolicity and central-cell corrections for D- centers in GaAs quantum wells.
    Mueller ER; Larsen DM; Goodhue WD; Waldman J
    Phys Rev B Condens Matter; 1995 Jan; 51(4):2326-2333. PubMed ID: 9978985
    [No Abstract]   [Full Text] [Related]  

  • 4. In-plane valence-band nonparabolicity and anisotropy in strained Si-Ge quantum wells.
    Zaslavsky A; Smith TP; Grützmacher DA; Lin SY; Sedgwick TO; Syphers DA
    Phys Rev B Condens Matter; 1993 Nov; 48(20):15112-15115. PubMed ID: 10008043
    [No Abstract]   [Full Text] [Related]  

  • 5. Nonparabolicity effects on cyclotron mass in GaAs quantum wells.
    Huant S; Mandray A; Etienne B
    Phys Rev B Condens Matter; 1992 Jul; 46(4):2613-2616. PubMed ID: 10003942
    [No Abstract]   [Full Text] [Related]  

  • 6. Effect of nonparabolicity in GaAs/Ga1-xAlxAs semiconductor quantum wells.
    Yoo KH; Ram-Mohan LR; Nelson DF
    Phys Rev B Condens Matter; 1989 Jun; 39(17):12808-12813. PubMed ID: 9948154
    [No Abstract]   [Full Text] [Related]  

  • 7. Consequences of subband nonparabolicity on intersubband excitations in p-doped GaAs/AlxGa1-xAs quantum wells.
    Kirchner M; Schüller C; Kraus J; Schaack G; Panzlaff K; Weimann G
    Phys Rev B Condens Matter; 1993 Apr; 47(15):9706-9709. PubMed ID: 10005041
    [No Abstract]   [Full Text] [Related]  

  • 8. Band nonparabolicity effects in semiconductor quantum wells.
    Nelson DF; Miller RC; Kleinman DA
    Phys Rev B Condens Matter; 1987 May; 35(14):7770-7773. PubMed ID: 9941101
    [No Abstract]   [Full Text] [Related]  

  • 9. Coupling-barrier and non-parabolicity effects on the conduction electron cyclotron effective mass and Landé [Formula: see text] factor in GaAs double quantum wells.
    Darío Perea J; Mejía-Salazar JR; Porras-Montenegro N
    J Phys Condens Matter; 2011 Feb; 23(6):065303. PubMed ID: 21406924
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Impact ionization of excitons and donors in AlxGa1-xAs/(n-type GaAs):Si quantum wells.
    Weman H; Treacy GM; Hjalmarson HP; Law KK; Merz JL; Gossard AC
    Phys Rev B Condens Matter; 1992 Mar; 45(11):6263-6266. PubMed ID: 10000375
    [No Abstract]   [Full Text] [Related]  

  • 11. Erratum: Magnetoexciton spectrum of GaAs-AlAs quantum wells.
    Smith DD; Dutta M; Liu XC; Terzis AF; Petrou A; Cole MW; Newman PG
    Phys Rev B Condens Matter; 1990 Oct; 42(11):7260. PubMed ID: 10021525
    [No Abstract]   [Full Text] [Related]  

  • 12. Conduction-band nonparabolicity in p-type quantum wells and Fourier determination of the hole wave functions by resonant Raman scattering.
    Suemoto T; Fasol G; Ploog K
    Phys Rev B Condens Matter; 1988 Apr; 37(11):6397-6405. PubMed ID: 9943882
    [No Abstract]   [Full Text] [Related]  

  • 13. Blocking of the polaron effect and spin-split cyclotron resonance in a two-dimensional electron Gas.
    Wu XG; Peeters FM; Wang YJ; McCombe BD
    Phys Rev Lett; 2000 May; 84(21):4934-7. PubMed ID: 10990835
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Coupling of THz radiation with intervalence band transitions in microcavities.
    Pereira MF; Faragai IA
    Opt Express; 2014 Feb; 22(3):3439-46. PubMed ID: 24663634
    [TBL] [Abstract][Full Text] [Related]  

  • 15. InAs/GaAs nanostructures grown on patterned Si(001) by molecular beam epitaxy.
    He J; Yadavalli K; Zhao Z; Li N; Hao Z; Wang KL; Jacob AP
    Nanotechnology; 2008 Nov; 19(45):455607. PubMed ID: 21832784
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Reversal of coherently controlled ultrafast photocurrents by band mixing in undoped GaAs quantum wells.
    Priyadarshi S; Racu AM; Pierz K; Siegner U; Bieler M; Duc HT; Förstner J; Meier T
    Phys Rev Lett; 2010 May; 104(21):217401. PubMed ID: 20867134
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Optical gain analysis of GaAs-based InGaAs/GaAsSbBi type-II quantum wells lasers.
    Chen B
    Opt Express; 2017 Oct; 25(21):25183-25192. PubMed ID: 29041188
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Colloidal GaAs quantum wires: solution-liquid-solid synthesis and quantum-confinement studies.
    Dong A; Yu H; Wang F; Buhro WE
    J Am Chem Soc; 2008 May; 130(18):5954-61. PubMed ID: 18393420
    [TBL] [Abstract][Full Text] [Related]  

  • 19. 1.3 μm InAs/GaAs quantum dot lasers on Si rib structures with current injection across direct-bonded GaAs/Si heterointerfaces.
    Tanabe K; Watanabe K; Arakawa Y
    Opt Express; 2012 Dec; 20(26):B315-21. PubMed ID: 23262867
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Strain-induced conduction-band nonparabolicity of GaAs-GaAs1-xPx superlattices.
    Brown LD; Jaros M
    Phys Rev B Condens Matter; 1988 Mar; 37(8):4306-4309. PubMed ID: 9945080
    [No Abstract]   [Full Text] [Related]  

    [Next]    [New Search]
    of 6.