These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

142 related articles for article (PubMed ID: 9991262)

  • 1. Band-gap renormalization and band-filling effects in a homogeneous electron-hole plasma in In0.53Ga0.47As/InP single quantum wells.
    Kulakovskii VD; Lach E; Forchel A; Grützmacher D
    Phys Rev B Condens Matter; 1989 Oct; 40(11):8087-8090. PubMed ID: 9991262
    [No Abstract]   [Full Text] [Related]  

  • 2. Subband renormalization in dense electron-hole plasmas in In0.53Ga0.47As/InP quantum wires.
    Wang KH; Bayer M; Forchel A; Ils P; Benner S; Haug H; Pagnod-Rossiaux P; Goldstein L
    Phys Rev B Condens Matter; 1996 Apr; 53(16):R10505-R10508. PubMed ID: 9982717
    [No Abstract]   [Full Text] [Related]  

  • 3. Optical study of extended-molecular-layer flat islands in lattice-matched In0.53Ga0.47As/InP and In0.53Ga0.47As/In1-xGaxAsyP1-y quantum wells grown by low-pressure metal-organic vapor-phase epitaxy with different interruption cycles.
    Sauer R; Nilsson S; Roentgen P; Heuberger W; Graf V; Hangleiter A; Spycher R
    Phys Rev B Condens Matter; 1992 Oct; 46(15):9525-9537. PubMed ID: 10002761
    [No Abstract]   [Full Text] [Related]  

  • 4. Lateral subband transitions in the luminescence spectra of a one-dimensional electron-hole plasma in In0.53Ga0.47As/InP quantum wires.
    Ils P; Forchel A; Wang KH; Pagnod-Rossiaux P; Goldstein L
    Phys Rev B Condens Matter; 1994 Oct; 50(16):11746-11749. PubMed ID: 9975311
    [No Abstract]   [Full Text] [Related]  

  • 5. Electroabsorption in In0.53Ga0.47As/In0.52Al0.48As asymmetric coupled quantum wells grown on InP substrates.
    Leavitt RP; Little JW; Horst SC
    Phys Rev B Condens Matter; 1989 Aug; 40(6):4183-4186. PubMed ID: 9992395
    [No Abstract]   [Full Text] [Related]  

  • 6. Defect States in InP/InGaAs/InP Heterostructures by Current-Voltage Characteristics and Deep Level Transient Spectroscopy.
    Vu TKO; Lee KS; Lee SJ; Kim EK
    J Nanosci Nanotechnol; 2018 Sep; 18(9):6239-6243. PubMed ID: 29677773
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Droplet epitaxy of InAs/InP quantum dots via MOVPE by using an InGaAs interlayer.
    Sala EM; Godsland M; Na YI; Trapalis A; Heffernan J
    Nanotechnology; 2021 Nov; 33(6):. PubMed ID: 34731846
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Comment on "Spectroscopy of excited states in In0.53Ga0.47As-InP single quantum wells grown by chemical-beam epitaxy".
    Cardona M; Christensen NE
    Phys Rev B Condens Matter; 1988 Jan; 37(2):1011-1012. PubMed ID: 9944599
    [No Abstract]   [Full Text] [Related]  

  • 9. Fabrication and Characterization of In
    Shin SH; Shim JP; Jang H; Jang JH
    Micromachines (Basel); 2022 Dec; 14(1):. PubMed ID: 36677117
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Barrier-controlled thermalization in In0.53Ga0.47As/InP quantum wells.
    Cebulla U; Forchel A; Bacher G; Grützmacher D; Tsang WT; Razeghi M
    Phys Rev B Condens Matter; 1989 Nov; 40(14):10009-10012. PubMed ID: 9991540
    [No Abstract]   [Full Text] [Related]  

  • 11. Influence of exciton ionization on recombination dynamics in In0.53Ga0.47As/InP quantum wells.
    Michler P; Hangleiter A; Moritz A; Härle V; Scholz F
    Phys Rev B Condens Matter; 1993 Jan; 47(3):1671-1674. PubMed ID: 10006194
    [No Abstract]   [Full Text] [Related]  

  • 12. Enhanced inelastic scattering and localization of excitons in In0.53Ga0.47As/InP alloy quantum wells.
    Hegarty J; Tai K; Tsang WT
    Phys Rev B Condens Matter; 1988 Oct; 38(11):7843-7845. PubMed ID: 9945524
    [No Abstract]   [Full Text] [Related]  

  • 13. Exciton dynamics for extended monolayer islands in thin In0.53Ga0.47As/InP quantum wells.
    Bacher G; Kovac J; Streubel K; Schweizer H; Scholz F
    Phys Rev B Condens Matter; 1992 Apr; 45(16):9136-9144. PubMed ID: 10000776
    [No Abstract]   [Full Text] [Related]  

  • 14. Magnetic-field-induced enhancement of exciton oscillator strength in In0.53Ga0.47As/InP quantum wells.
    Sugawara M
    Phys Rev B Condens Matter; 1992 May; 45(19):11423-11425. PubMed ID: 10001086
    [No Abstract]   [Full Text] [Related]  

  • 15. Correlation between Optical Localization-State and Electrical Deep-Level State in In
    Ahn IH; Kim DY; Lee S
    Nanomaterials (Basel); 2021 Feb; 11(3):. PubMed ID: 33652753
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Theoretical and experimental study of the optical-absorption spectrum of exciton resonance in In0.53Ga0.47As/InP quantum wells.
    Sugawara M; Fujii T; Yamazaki S; Nakajima K
    Phys Rev B Condens Matter; 1990 Nov; 42(15):9587-9597. PubMed ID: 9995200
    [No Abstract]   [Full Text] [Related]  

  • 17. Diamagnetic shift and oscillator strength of two-dimensional excitons under a magnetic field in In0.53Ga0.47As/InP quantum wells.
    Sugawara M; Okazaki N; Fujii T; Yamazaki S
    Phys Rev B Condens Matter; 1993 Sep; 48(12):8848-8856. PubMed ID: 10007102
    [No Abstract]   [Full Text] [Related]  

  • 18. Damage-Free Smooth-Sidewall InGaAs Nanopillar Array by Metal-Assisted Chemical Etching.
    Kong L; Song Y; Kim JD; Yu L; Wasserman D; Chim WK; Chiam SY; Li X
    ACS Nano; 2017 Oct; 11(10):10193-10205. PubMed ID: 28880533
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Electron and hole effective masses from magnetoluminescence studies of modulation-doped InP/In0.53Ga0.47As heterostructures.
    Zhao QX; Holtz PO; Monemar B; Lundström T; Wallin J; Landgren G
    Phys Rev B Condens Matter; 1993 Oct; 48(16):11890-11896. PubMed ID: 10007530
    [No Abstract]   [Full Text] [Related]  

  • 20. Multi-dimensional optimization of In
    Gamel MMA; Ker PJ; Lee HJ; Rashid WESWA; Hannan MA; David JPR; Jamaludin MZ
    Sci Rep; 2021 Apr; 11(1):7741. PubMed ID: 33833263
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 8.