These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

122 related articles for article (PubMed ID: 9991305)

  • 1. Resonant inverse-photoemission study of layer-dependent surface states at the epitaxial GaAs(110)-Bi interface.
    McLean AB; Himpsel FJ
    Phys Rev B Condens Matter; 1989 Oct; 40(12):8425-8430. PubMed ID: 9991305
    [No Abstract]   [Full Text] [Related]  

  • 2. Effect of different epitaxial structures on GaAs photoemission.
    Zou J; Zhang Y; Deng W; Jin J; Chang B
    Appl Opt; 2011 Sep; 50(27):5228-34. PubMed ID: 21947040
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Epitaxial Sn and Bi on GaAs(110): Inverse photoemission, shallow core-hole emission, and Ga 3d excitons.
    Hu Y; Wagener TJ; Jost MB; Weaver JH
    Phys Rev B Condens Matter; 1990 Mar; 41(9):5817-5824. PubMed ID: 9994466
    [No Abstract]   [Full Text] [Related]  

  • 4. Surface passivation and interface properties of bulk GaAs and epitaxial-GaAs/Ge using atomic layer deposited TiAlO alloy dielectric.
    Dalapati GK; Chia CK; Tan CC; Tan HR; Chiam SY; Dong JR; Das A; Chattopadhyay S; Mahata C; Maiti CK; Chi DZ
    ACS Appl Mater Interfaces; 2013 Feb; 5(3):949-57. PubMed ID: 23331503
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Droplet-mediated formation of embedded GaAs nanowires in MBE GaAs(1-x)Bi(x) films.
    Wood AW; Collar K; Li J; Brown AS; Babcock SE
    Nanotechnology; 2016 Mar; 27(11):115704. PubMed ID: 26876494
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Thermally reversible band bending for Bi/GaAs(110): Photoemission and inverse-photoemission investigations.
    Waddill GD; Aldao CM; Capasso C; Benning PJ; Hu Y; Wagener TJ; Jost MB; Weaver JH
    Phys Rev B Condens Matter; 1990 Mar; 41(9):5960-5968. PubMed ID: 9994480
    [No Abstract]   [Full Text] [Related]  

  • 7. Low temperature plasma enhanced CVD epitaxial growth of silicon on GaAs: a new paradigm for III-V/Si integration.
    Cariou R; Chen W; Maurice JL; Yu J; Patriarche G; Mauguin O; Largeau L; Decobert J; Roca I Cabarrocas P
    Sci Rep; 2016 May; 6():25674. PubMed ID: 27166163
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Long-range ordering of Sb multilayers on GaAs(110): Evolution of resonant inverse photoemission.
    Hu Y; Jost MB; Wagener TJ; Weaver JH
    Phys Rev B Condens Matter; 1990 Oct; 42(11):7050-7057. PubMed ID: 9994829
    [No Abstract]   [Full Text] [Related]  

  • 9. Effects of Ga-Te interface layer on the potential barrier height of CdTe/GaAs heterointerface.
    Xi S; Jie W; Zha G; Yuan Y; Wang T; Zhang W; Zhu J; Xu L; Xu Y; Su J; Zhang H; Gu Y; Li J; Ren J; Zhao Q
    Phys Chem Chem Phys; 2016 Jan; 18(4):2639-45. PubMed ID: 26699197
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Reversal of spin polarization in Fe/GaAs (001) driven by resonant surface states: first-principles calculations.
    Chantis AN; Belashchenko KD; Smith DL; Tsymbal EY; van Schilfgaarde M; Albers RC
    Phys Rev Lett; 2007 Nov; 99(19):196603. PubMed ID: 18233099
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Spin polarized surface resonance bands in single layer Bi on Ge(1 1 1).
    Bottegoni F; Calloni A; Bussetti G; Camera A; Zucchetti C; Finazzi M; Duò L; Ciccacci F
    J Phys Condens Matter; 2016 May; 28(19):195001. PubMed ID: 27073190
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Inverse-photoemission study of Ge(100), Si(100), and GaAs(100): Bulk bands and surface states.
    Ortega JE; Himpsel FJ
    Phys Rev B Condens Matter; 1993 Jan; 47(4):2130-2137. PubMed ID: 10006252
    [No Abstract]   [Full Text] [Related]  

  • 13. Epitaxial growth and band alignment of (Gd(x)La(1-x))(2)O(3) films on n-GaAs (001).
    Yang JK; Choi SG; Park HH
    Micron; 2009 Jan; 40(1):114-7. PubMed ID: 18442915
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Nonmagnetic band gap at the Dirac point of the magnetic topological insulator (Bi(1-x)Mn(x))2Se3.
    Sánchez-Barriga J; Varykhalov A; Springholz G; Steiner H; Kirchschlager R; Bauer G; Caha O; Schierle E; Weschke E; Ünal AA; Valencia S; Dunst M; Braun J; Ebert H; Minár J; Golias E; Yashina LV; Ney A; Holý V; Rader O
    Nat Commun; 2016 Feb; 7():10559. PubMed ID: 26892831
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Combined experimental setup for spin- and angle-resolved direct and inverse photoemission.
    Budke M; Allmers T; Donath M; Rangelov G
    Rev Sci Instrum; 2007 Nov; 78(11):113909. PubMed ID: 18052490
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Direct determination of epitaxial interface structure in Gd2O3 passivation of GaAs.
    Yacoby Y; Sowwan M; Stern E; Cross JO; Brewe D; Pindak R; Pitney J; Dufresne EM; Clarke R
    Nat Mater; 2002 Oct; 1(2):99-101. PubMed ID: 12618822
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Conduction-band dispersion, critical points, and unoccupied surface states on GaAs(110): A high-resolution angle-resolved inverse photoemission study.
    Straub D; Skibowski M; Himpsel FJ
    Phys Rev B Condens Matter; 1985 Oct; 32(8):5237-5244. PubMed ID: 9937736
    [No Abstract]   [Full Text] [Related]  

  • 18. GaAs nanowires with oxidation-proof arsenic capping for the growth of an epitaxial shell.
    Guan X; Becdelievre J; Benali A; Botella C; Grenet G; Regreny P; Chauvin N; Blanchard NP; Jaurand X; Saint-Girons G; Bachelet R; Gendry M; Penuelas J
    Nanoscale; 2016 Aug; 8(34):15637-44. PubMed ID: 27513669
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Tailoring the interface quality between HfO2 and GaAs via in situ ZnO passivation using atomic layer deposition.
    Byun YC; Choi S; An Y; McIntyre PC; Kim H
    ACS Appl Mater Interfaces; 2014 Jul; 6(13):10482-8. PubMed ID: 24911531
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Low-temperature growth of bismuth thin films with (111) facet on highly oriented pyrolytic graphite.
    Song F; Wells JW; Jiang Z; Saxegaard M; Wahlström E
    ACS Appl Mater Interfaces; 2015 Apr; 7(16):8525-32. PubMed ID: 25849866
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 7.