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2. Optical study of extended-molecular-layer flat islands in lattice-matched In0.53Ga0.47As/InP and In0.53Ga0.47As/In1-xGaxAsyP1-y quantum wells grown by low-pressure metal-organic vapor-phase epitaxy with different interruption cycles. Sauer R; Nilsson S; Roentgen P; Heuberger W; Graf V; Hangleiter A; Spycher R Phys Rev B Condens Matter; 1992 Oct; 46(15):9525-9537. PubMed ID: 10002761 [No Abstract] [Full Text] [Related]
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10. Comment on "Spectroscopy of excited states in In0.53Ga0.47As-InP single quantum wells grown by chemical-beam epitaxy". Cardona M; Christensen NE Phys Rev B Condens Matter; 1988 Jan; 37(2):1011-1012. PubMed ID: 9944599 [No Abstract] [Full Text] [Related]
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18. Field localization of electrons in In0.53Ga0.47As/In0.82Ga0.18As0.40P0.60 quantum wells studied by electroabsorption. Weiser G; Satzke K; Schlichtherle B; Goldstein L; Perales A Phys Rev B Condens Matter; 1992 Jun; 45(24):14376-14379. PubMed ID: 10001568 [No Abstract] [Full Text] [Related]
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