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5. Resonant tunneling in crossed electric and magnetic fields in GaAs-AlAs superlattices. Müller W; Grahn HT; von Klitzing K ; Ploog K Phys Rev B Condens Matter; 1993 Oct; 48(15):11176-11183. PubMed ID: 10007425 [No Abstract] [Full Text] [Related]
6. Electroluminescence study of resonant tunneling in GaAs-AlAs superlattices. Klann R; Grahn HT; Ploog K Phys Rev B Condens Matter; 1994 Oct; 50(15):11037-11044. PubMed ID: 9975212 [No Abstract] [Full Text] [Related]
7. Sequential hole tunneling in n-type AlAs/GaAs resonant-tunneling structures from time-resolved photoluminescence. Van Hoof C ; Goovaerts E; Borghs G Phys Rev B Condens Matter; 1992 Sep; 46(11):6982-6989. PubMed ID: 10002404 [No Abstract] [Full Text] [Related]
8. Sequential resonant tunneling characteristics of AlAs/GaAs multiple-quantum-well structures. Tarucha S; Ploog K Phys Rev B Condens Matter; 1988 Aug; 38(6):4198-4204. PubMed ID: 9946794 [No Abstract] [Full Text] [Related]
9. Exciton effects in sequential resonant tunneling of photocarriers in GaAs/AlAs multiple quantum wells. Schneider H; Wagner J; Ploog K Phys Rev B Condens Matter; 1993 Oct; 48(15):11051-11056. PubMed ID: 10007410 [No Abstract] [Full Text] [Related]
11. Layer ordering and faulting in (GaAs)n/(AlAs)n ultrashort-period superlattices. Li JH; Moss SC; Zhang Y; Mascarenhas A; Pfeiffer LN; West KW; Ge WK; Bai J Phys Rev Lett; 2003 Sep; 91(10):106103. PubMed ID: 14525495 [TBL] [Abstract][Full Text] [Related]
12. Doubly and triply resonant Raman scattering by LO phonons in GaAs/AlAs superlattices. Alexandrou A; Cardona M; Ploog K Phys Rev B Condens Matter; 1988 Jul; 38(3):2196-2199. PubMed ID: 9946517 [No Abstract] [Full Text] [Related]
13. Resonant interference effects in the phonon Raman spectra of (311) GaAs/AlAs superlattices. Shields AJ; Popovic ZV; Cardona M; Spitzer J; Nötzel R; Ploog K Phys Rev B Condens Matter; 1994 Mar; 49(11):7584-7591. PubMed ID: 10009502 [No Abstract] [Full Text] [Related]
14. Resonant Raman scattering in GaAs/AlAs superlattices: The role of electron state mixing. Mlayah A; Carles R; Sayari A; Chtourou R; Charfi FF; Planel R Phys Rev B Condens Matter; 1996 Feb; 53(7):3960-3965. PubMed ID: 9983948 [No Abstract] [Full Text] [Related]
15. Resonant Raman scattering in GaAs/AlAs superlattices under electric fields. Shields AJ; Trallero-Giner C; Cardona M; Grahn HT; Ploog K; Haisler VA; Tenne DA; Moshegov NT; Toropov AI Phys Rev B Condens Matter; 1992 Sep; 46(11):6990-7001. PubMed ID: 10002405 [No Abstract] [Full Text] [Related]
16. Multiphonon resonant Raman scattering in short-period GaAs/AlAs superlattices. Mowbray DJ; Cardona M; Ploog K Phys Rev B Condens Matter; 1991 May; 43(14):11815-11824. PubMed ID: 9996954 [No Abstract] [Full Text] [Related]
17. Theoretical study on interband tunneling of holes through GaAs/AlAs/GaAs single-barrier heterostructures. Morifuji M; Hamaguchi C Phys Rev B Condens Matter; 1995 Nov; 52(19):14131-14136. PubMed ID: 9980633 [No Abstract] [Full Text] [Related]
18. Tunneling escape time of electrons from the quasibound Stark localized states in ultrathin barrier GaAs/AlAs superlattices. Fujiwara K; Kawashima K; Imanishi T Phys Rev B Condens Matter; 1996 Dec; 54(24):17724-17729. PubMed ID: 9985901 [No Abstract] [Full Text] [Related]
19. Electronic states in GaAs-AlAs lateral-surface superlattices produced by deposition of AlAs and GaAs fractional layers on (001) vicinal GaAs substrates. Sun H Phys Rev B Condens Matter; 1992 Nov; 46(19):12371-12376. PubMed ID: 10003151 [No Abstract] [Full Text] [Related]
20. High-order resonant Raman scattering by combinations and overtones of interface phonons in GaAs-AlAs short-period superlattices. Meynadier MH; Finkman E; Sturge MD; Worlock JM; Tamargo MC Phys Rev B Condens Matter; 1987 Feb; 35(5):2517-2520. PubMed ID: 9941717 [No Abstract] [Full Text] [Related] [Next] [New Search]