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5. Photoreflectance and piezophotoreflectance studies of strained-layer InxGa1-xAs-GaAs quantum wells. Arnaud G; Allègre J; Lefebvre P; Mathieu H; Howard LK; Dunstan DJ Phys Rev B Condens Matter; 1992 Dec; 46(23):15290-15301. PubMed ID: 10003646 [No Abstract] [Full Text] [Related]
6. Hydrostatic pressure coefficients of the photoluminescence of InxGa1-xAs/GaAs strained-layer quantum wells. Wilkinson VA; Prins AD; Lambkin JD; O'Reilly EP; Dunstan DJ; Howard LK; Emeny MT Phys Rev B Condens Matter; 1990 Aug; 42(5):3113-3119. PubMed ID: 9995808 [No Abstract] [Full Text] [Related]
7. Influence of the spin-orbit split-off valence band in InxGa1-xAs/AlyGa1-yAs strained-layer quantum wells. Gil B; Howard LK; Dunstan DJ; Boring P; Lefebvre P Phys Rev B Condens Matter; 1992 Feb; 45(7):3906-3909. PubMed ID: 10001995 [No Abstract] [Full Text] [Related]
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10. Zeeman splitting of the excitonic recombination in InxGa1-xAs/GaAs single quantum wells. Wimbauer T; Oettinger K; Efros AL; Meyer BK; Brugger H Phys Rev B Condens Matter; 1994 Sep; 50(12):8889-8892. PubMed ID: 9974919 [No Abstract] [Full Text] [Related]
11. Femtosecond dynamics of excitonic absorption in the infrared InxGa1-xAs quantum wells. Wegener M; Bar-Joseph I; Sucha G; Islam MN; Sauer N; Chang TY; Chemla DS Phys Rev B Condens Matter; 1989 Jun; 39(17):12794-12801. PubMed ID: 9948152 [No Abstract] [Full Text] [Related]
12. Interdiffusion process in lattice-matched InxGa1-xAsyP1-y/InP and GaAs/AlxGa1-xAs quantum wells. Mukai K; Sugawara M; Yamazaki S Phys Rev B Condens Matter; 1994 Jul; 50(4):2273-2282. PubMed ID: 9976444 [No Abstract] [Full Text] [Related]
13. Free-carrier screening of the interaction between excitons and longitudinal-optical phonons in InxGa1-xAs-InP quantum wells. Skolnick MS; Nash KJ; Tapster PR; Mowbray DJ; Bass SJ; Pitt AD Phys Rev B Condens Matter; 1987 Apr; 35(11):5925-5928. PubMed ID: 9940819 [No Abstract] [Full Text] [Related]
14. Final-state excitations in the photoluminescence spectra of InxGa1-xAs-InP quantum wells at low and high carrier density. Skolnick MS; Nash KJ; Saker MK; Bass SJ Phys Rev B Condens Matter; 1994 Oct; 50(16):11771-11782. PubMed ID: 9975315 [No Abstract] [Full Text] [Related]
15. Normalized reflection spectra in GaAs/InxGa1-xAs single quantum wells: Structure characterizations and excitonic properties. D'Andrea A; Tomassini N; Ferrari L; Righini M; Selci S; Bruni MR; Simeone MG; Gambacorti N Phys Rev B Condens Matter; 1995 Oct; 52(15):10713-10716. PubMed ID: 9980151 [No Abstract] [Full Text] [Related]
16. Self-consistent electronic-structure calculation of InP/InxGa1-xAs effective-mass quantum wells: The influence of a continuous spectrum. Tadic M; Milanovic V; Ikonic Z Phys Rev B Condens Matter; 1993 Apr; 47(16):10415-10422. PubMed ID: 10005152 [No Abstract] [Full Text] [Related]
17. Concentration-dependent band offset in InxGa1-xAs/GaAs strained quantum wells. Joyce MJ; Johnson MJ; Gal M; Usher BF Phys Rev B Condens Matter; 1988 Nov; 38(15):10978-10980. PubMed ID: 9945972 [No Abstract] [Full Text] [Related]