These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

107 related articles for article (PubMed ID: 9993803)

  • 21. Thermally induced metastable defects in hydrogenated amorphous silicon and silicon-carbon alloy films.
    Xu X; Okumura A; Morimoto A; Kumeda M; Shimizu T
    Phys Rev B Condens Matter; 1988 Oct; 38(12):8371-8376. PubMed ID: 9945594
    [No Abstract]   [Full Text] [Related]  

  • 22. Light-induced change in defect-band photoluminescence of doped hydrogenated amorphous silicon.
    Qiu C; Pankove JI
    Phys Rev B Condens Matter; 1990 Jun; 41(18):12744-12749. PubMed ID: 9993751
    [No Abstract]   [Full Text] [Related]  

  • 23. [Bonding structure in silicon nitride thin films containing silicon nano-particles].
    Ding WG; Yu W; Yang YB; Zhang JY; Fu GS
    Guang Pu Xue Yu Guang Pu Fen Xi; 2006 Oct; 26(10):1798-801. PubMed ID: 17205723
    [TBL] [Abstract][Full Text] [Related]  

  • 24. Multi-band silicon quantum dots embedded in an amorphous matrix of silicon carbide.
    Chang GR; Ma F; Ma DY; Xu KW
    Nanotechnology; 2010 Nov; 21(46):465605. PubMed ID: 20975214
    [TBL] [Abstract][Full Text] [Related]  

  • 25. Light-induced metastable defects in hydrogenated amorphous silicon: A systematic study.
    Stutzmann M; Jackson WB; Tsai CC
    Phys Rev B Condens Matter; 1985 Jul; 32(1):23-47. PubMed ID: 9936636
    [No Abstract]   [Full Text] [Related]  

  • 26. Metastable defects in hydrogenated amorphous silicon.
    Crandall RS
    Phys Rev B Condens Matter; 1987 Aug; 36(5):2645-2665. PubMed ID: 9943149
    [No Abstract]   [Full Text] [Related]  

  • 27. Metastable changes of the electronic spin-lattice relaxation time in hydrogenated amorphous silicon.
    Stutzmann M
    Phys Rev B Condens Matter; 1986 May; 33(10):7379-7382. PubMed ID: 9938098
    [No Abstract]   [Full Text] [Related]  

  • 28. Metastable effects in the dc conductivity of undoped glow discharge and sputtered hydrogenated amorphous silicon.
    Meaudre R; Jensen P; Meaudre M
    Phys Rev B Condens Matter; 1988 Dec; 38(17):12449-12456. PubMed ID: 9946187
    [No Abstract]   [Full Text] [Related]  

  • 29. Picosecond photoinduced absorption as a probe of metastable light-induced defects in intrinsic hydrogenated amorphous silicon.
    Gustafson TL; Scher H; Roberts DM; Collins RW
    Phys Rev Lett; 1988 Jan; 60(2):148-151. PubMed ID: 10038221
    [No Abstract]   [Full Text] [Related]  

  • 30. Ultrafast nonlinear effects in hydrogenated amorphous silicon wire waveguide.
    Shoji Y; Ogasawara T; Kamei T; Sakakibara Y; Suda S; Kintaka K; Kawashima H; Okano M; Hasama T; Ishikawa H; Mori M
    Opt Express; 2010 Mar; 18(6):5668-73. PubMed ID: 20389582
    [TBL] [Abstract][Full Text] [Related]  

  • 31. Photo-excited hot carrier dynamics in hydrogenated amorphous silicon imaged by 4D electron microscopy.
    Liao B; Najafi E; Li H; Minnich AJ; Zewail AH
    Nat Nanotechnol; 2017 Sep; 12(9):871-876. PubMed ID: 28674459
    [TBL] [Abstract][Full Text] [Related]  

  • 32. Improved amorphous/crystalline silicon interface passivation for heterojunction solar cells by low-temperature chemical vapor deposition and post-annealing treatment.
    Wang F; Zhang X; Wang L; Jiang Y; Wei C; Xu S; Zhao Y
    Phys Chem Chem Phys; 2014 Oct; 16(37):20202-8. PubMed ID: 25138166
    [TBL] [Abstract][Full Text] [Related]  

  • 33. Effect of high-temperature annealing on the optical-absorption edge of hydrogenated amorphous silicon-carbon films.
    Zhang F; Xue H; Song Z; Guo Y; Chen G
    Phys Rev B Condens Matter; 1992 Aug; 46(8):4590-4594. PubMed ID: 10004214
    [No Abstract]   [Full Text] [Related]  

  • 34. Nonlinear properties of and nonlinear processing in hydrogenated amorphous silicon waveguides.
    Kuyken B; Ji H; Clemmen S; Selvaraja SK; Hu H; Pu M; Galili M; Jeppesen P; Morthier G; Massar S; Oxenløwe LK; Roelkens G; Baets R
    Opt Express; 2011 Dec; 19(26):B146-53. PubMed ID: 22274011
    [TBL] [Abstract][Full Text] [Related]  

  • 35. Structural changes in boron-doped hydrogenated amorphous silicon during long-time annealing below the deposition temperature.
    Asano A; Stutzmann M
    Phys Rev B Condens Matter; 1990 Sep; 42(8):5388-5390. PubMed ID: 9996118
    [No Abstract]   [Full Text] [Related]  

  • 36. Defect formation during growth of hydrogenated amorphous silicon.
    Ganguly G; Matsuda A
    Phys Rev B Condens Matter; 1993 Feb; 47(7):3661-3670. PubMed ID: 10006467
    [No Abstract]   [Full Text] [Related]  

  • 37. Molecular-dynamics simulations of defect formation in hydrogenated amorphous silicon.
    Kwon I; Biswas R; Soukoulis CM
    Phys Rev B Condens Matter; 1992 Feb; 45(7):3332-3339. PubMed ID: 10001904
    [No Abstract]   [Full Text] [Related]  

  • 38. Erratum: Defect formation during growth of hydrogenated amorphous silicon.
    Ganguly G; Matsuda A
    Phys Rev B Condens Matter; 1993 Jul; 48(3):2025. PubMed ID: 10008591
    [No Abstract]   [Full Text] [Related]  

  • 39. Telecom to mid-infrared spanning supercontinuum generation in hydrogenated amorphous silicon waveguides using a Thulium doped fiber laser pump source.
    Dave UD; Uvin S; Kuyken B; Selvaraja S; Leo F; Roelkens G
    Opt Express; 2013 Dec; 21(26):32032-9. PubMed ID: 24514798
    [TBL] [Abstract][Full Text] [Related]  

  • 40. Theory of defect formation in the glow-discharge deposition of phosphorus-doped hydrogenated amorphous silicon.
    Kampas FJ; Vanier PE
    Phys Rev B Condens Matter; 1985 Mar; 31(6):3654-3658. PubMed ID: 9936260
    [No Abstract]   [Full Text] [Related]  

    [Previous]   [Next]    [New Search]
    of 6.