These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
97 related articles for article (PubMed ID: 9996577)
1. Photoluminescence due to a bound-to-bound transition in a GaAs-Al0.3Ga0.7As quantum-well structure. Reynolds DC; Evans KR; Merkel KG; Stutz CE; Yu PW Phys Rev B Condens Matter; 1991 Apr; 43(11):9087-9095. PubMed ID: 9996577 [No Abstract] [Full Text] [Related]
2. Enhancement of the free-to-bound transition in narrow GaAs/Al0.3Ga0.7As quantum wells via a possible excitonic Auger mechanism. Holtz PO; Sundaram M; Merz JL; Gossard AC Phys Rev B Condens Matter; 1990 Jan; 41(3):1489-1496. PubMed ID: 9993865 [No Abstract] [Full Text] [Related]
3. Photoluminescence-excitation-correlation spectroscopic study of a high-density two-dimensional electron gas in GaAs/Al0.3Ga0.7As modulation-doped quantum wells. Liu DW; Xu XM; Chen YF Phys Rev B Condens Matter; 1994 Feb; 49(7):4640-4645. PubMed ID: 10011389 [No Abstract] [Full Text] [Related]
4. Temperature and many-body effects on the intersubband transition in a GaAs/Al0.3Ga0.7As multiple quantum well. Szmulowicz F; Manasreh MO; Stutz CE; Vaughan T Phys Rev B Condens Matter; 1994 Oct; 50(16):11618-11623. PubMed ID: 9975294 [No Abstract] [Full Text] [Related]
5. Fabrication of GaAs/Al0.3Ga0.7As multiple quantum well nanostructures on (100) si substrate using a 1-nm InAs relief layer. Oh HJ; Park SJ; Lim JY; Cho NK; Song JD; Lee W; Lee YJ; Myoung JM; Choi WJ J Nanosci Nanotechnol; 2014 Apr; 14(4):2984-9. PubMed ID: 24734721 [TBL] [Abstract][Full Text] [Related]
6. Infrared photodetector sensitized by InAs quantum dots embedded near an Al Murata T; Asahi S; Sanguinetti S; Kita T Sci Rep; 2020 Jul; 10(1):11628. PubMed ID: 32669650 [TBL] [Abstract][Full Text] [Related]
7. Phonon satellite strengths in the photoluminescence spectra of a type-II GaAs/Al0.3Ga0.7As superlattice at elevated pressures. Tribe WR; Klipstein PC; Woolley RA; Roberts JS Phys Rev B Condens Matter; 1995 Apr; 51(15):9735-9741. PubMed ID: 9977641 [No Abstract] [Full Text] [Related]
8. Design and comparison of GaAs, GaAsP and InGaAlAs quantum-well active regions for 808-nm VCSELs. Zhang Y; Ning Y; Zhang L; Zhang J; Zhang J; Wang Z; Zhang J; Zeng Y; Wang L Opt Express; 2011 Jun; 19(13):12569-81. PubMed ID: 21716498 [TBL] [Abstract][Full Text] [Related]
9. Polarization envelope helicity dependent photovoltage in GaAs/Al Ito H; Nakano T; Nomura S; Misawa K Opt Express; 2019 Sep; 27(20):28091-28103. PubMed ID: 31684567 [TBL] [Abstract][Full Text] [Related]
10. Tunneling-induced optical nonlinearities in asymmetric Al0.3Ga0.7As/GaAs double-quantum-well structures. Leopold DJ; Leopold MM Phys Rev B Condens Matter; 1990 Dec; 42(17):11147-11158. PubMed ID: 9995396 [No Abstract] [Full Text] [Related]
11. Low Temperature Photoluminescence Kinetics of Double-Ring Structured GaAs Quantum Dots. Myoung S; Mun OM; Yim SY; Kim JS J Nanosci Nanotechnol; 2015 Nov; 15(11):8684-7. PubMed ID: 26726575 [TBL] [Abstract][Full Text] [Related]
12. Optical properties of excitons in GaAs/Al0.3Ga0.7As symmetric double quantum wells. Westgaard T; Zhao QX; Fimland BO; Johannessen K; Johnsen L Phys Rev B Condens Matter; 1992 Jan; 45(4):1784-1792. PubMed ID: 10001680 [No Abstract] [Full Text] [Related]
13. Origin of the blueshift in the intersubband infrared absorption in GaAs/Al0.3Ga0.7As multiple quantum wells. Manasreh MO; Szmulowicz F; Vaughan T; Evans KR; Stutz CE; Fischer DW Phys Rev B Condens Matter; 1991 Apr; 43(12):9996-9999. PubMed ID: 9996714 [No Abstract] [Full Text] [Related]
14. Evaluation of GaAs/Al0.3Ga0.7As multiple-quantum-well waveguides for pulsed squeezed light generation. Fox AM; Huttner B; Ryan JF Phys Rev A; 1994 Nov; 50(5):4415-4418. PubMed ID: 9911426 [No Abstract] [Full Text] [Related]
15. Electric-field effects on exciton lifetimes in symmetric coupled GaAs/Al0.3Ga0.7As double quantum wells. Alexandrou A; Kash JA; Mendez EE; Zachau M; Hong JM; Fukuzawa T; Hase Y Phys Rev B Condens Matter; 1990 Nov; 42(14):9225-9228. PubMed ID: 9995154 [No Abstract] [Full Text] [Related]
17. Direct mapping of electronic structure across Al0.3Ga0.7As/GaAs heterojunctions: Band offsets, asymmetrical transition widths, and multiple-valley band structures. Gwo S; Chao K; Shih CK; Sadra K; Streetman BG Phys Rev Lett; 1993 Sep; 71(12):1883-1886. PubMed ID: 10054524 [No Abstract] [Full Text] [Related]
18. Post-thermal-Induced Recrystallization in GaAs/Al Yeo I; Yi KS; Lee EH; Song JD; Kim JS; Han IK ACS Omega; 2018 Aug; 3(8):8677-8682. PubMed ID: 31458998 [TBL] [Abstract][Full Text] [Related]
19. Magnetoconductivity of a two-dimensional electron gas in Al0.3Ga0.7As/Ga1-xINxAs/GaAs pseudomorphic heterostructures in the quantum Hall regime. Luo JK; Ohno H; Matsuzaki K; Umeda T; Nakahara J; Hasegawa H Phys Rev B Condens Matter; 1989 Aug; 40(5):3461-3464. PubMed ID: 9992309 [No Abstract] [Full Text] [Related]
20. Comparative study of photoluminescence from In Wang G; Liang B; Juang BC; Das A; Debnath MC; Huffaker DL; Mazur YI; Ware ME; Salamo GJ Nanotechnology; 2016 Nov; 27(46):465701. PubMed ID: 27749272 [TBL] [Abstract][Full Text] [Related] [Next] [New Search]