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  • Title: Nonballistic spin-field-effect transistor.
    Author: Schliemann J, Egues JC, Loss D.
    Journal: Phys Rev Lett; 2003 Apr 11; 90(14):146801. PubMed ID: 12731937.
    Abstract:
    We propose a spin-field-effect transistor based on spin-orbit coupling of both the Rashba and the Dresselhaus types. Different from earlier proposals, spin transport through our device is tolerant against spin-independent scattering processes. Hence the requirement of strictly ballistic transport can be relaxed. This follows from a unique interplay between the Dresselhaus and the Rashba coupling; these can be tuned to have equal strengths, leading to k-independent eigenspinors even in two dimensions. We discuss two-dimensional devices as well as quantum wires. In the latter, our setup presents strictly parabolic dispersions which avoids complications from anticrossings of different bands.
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