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  • Title: Very large tunneling anisotropic magnetoresistance of a (Ga,Mn)As/GaAs/(Ga,Mn)As stack.
    Author: Rüster C, Gould C, Jungwirth T, Sinova J, Schott GM, Giraud R, Brunner K, Schmidt G, Molenkamp LW.
    Journal: Phys Rev Lett; 2005 Jan 21; 94(2):027203. PubMed ID: 15698223.
    Abstract:
    We report the discovery of a very large tunneling anisotropic magnetoresistance in an epitaxially grown (Ga,Mn)As/GaAs/(Ga,Mn)As structure. The key novel spintronics features of this effect are as follows: (i) both normal and inverted spin-valve-like signals; (ii) a large nonhysteretic magnetoresistance for magnetic fields perpendicular to the interfaces; (iii) magnetization orientations for extremal resistance are, in general, not aligned with the magnetic easy and hard axis; (iv) enormous amplification of the effect at low bias and temperatures.
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