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  • Title: InAs/GaAs quantum-dot saturable absorbers for diode-pumped passively Q-switched Nd-doped 1.3-microm lasers.
    Author: Lai HC, Li A, Su KW, Ku ML, Chen YF, Huang KF.
    Journal: Opt Lett; 2005 Mar 01; 30(5):480-2. PubMed ID: 15789709.
    Abstract:
    A low-loss semiconductor saturable absorber based on InAs/GaAs quantum dots was developed for Q switching of a diode-pumped Nd-doped laser operating at 1.3 microm. With an InAs/GaAs quantum-dot saturable absorber, a diode-pumped Nd:YVO4 laser at 1342 nm was achieved. With an incident pump power of 2.2 W, an average output power of 360 mW with a Q-switched pulse width of 90 ns at a pulse repetition rate of 770 kHz was obtained.
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