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  • Title: Formation of C=C and Si-Cl adstructures by insertion reactions of cis-dichloroethylene and perchloroethylene on Si(100)2 x 1.
    Author: Zhou XJ, Li Q, Leung KT.
    Journal: J Phys Chem B; 2006 Mar 23; 110(11):5602-10. PubMed ID: 16539503.
    Abstract:
    The room-temperature adsorption and thermal evolution of cis-dichloroethylene (DCE) and perchloroethylene (PCE) on Si(100)2 x 1 have been studied by X-ray photoelectron spectroscopy and temperature programmed desorption (TPD) mass spectrometry. Unlike ethylene that is found to adsorb on Si(100)2 x 1 through a [2+2] cycloaddition reaction, cis-DCE and PCE appear to dechlorinate upon adsorption on the 2 x 1 surface through an insertion reaction preserving the C=C bond. Our C 1s XPS spectra are consistent with the existence of mono-sigma-bonded and di-sigma bonded dechlorinated adstructures for both cis-DCE and PCE. The presence of the XPS C 1s feature at 283.9 eV, characteristic of the (=C<(Si)(Si)) component, supports the formation of a unique tetra-sigma-bonded C(2) dimer (i.e., by full dechlorination) for PCE, which is found to be stable to 800 K. In marked contrast to PCE for which no organic desorption fragments are observed, m/z 26 TPD features at 590 and 750 K have been observed for cis-DCE. These features could be attributed to the formation of acetylene resulting from Cl beta-elimination of 2-chlorovinyl adspecies and to direct desorption of vinylene, respectively. Further annealing the cis-DCE and PCE samples to above 800 K produces SiC and/or carbon clusters. The TPD data also show HCl evolution over 810-850 K for both cis-DCE and PCE, the latter of which also exhibits an additional SiCl(2) evolution above 850 K. The present work illustrates that the insertion mechanism could be quite common in the surface chemistry of chlorinated ethylenes on the 2 x 1 surface.
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