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  • Title: Enabling gate dielectric design for all solution-processed, high-performance, flexible organic thin-film transistors.
    Author: Liu P, Wu Y, Li Y, Ong BS, Zhu S.
    Journal: J Am Chem Soc; 2006 Apr 12; 128(14):4554-5. PubMed ID: 16594675.
    Abstract:
    A novel solution-processed, compositionally and structurally stable dual-layer gate dielectric composed of a UV-cured poly(4-vinyl phenol)-co-poly(methyl methacrylate) bottom layer and a thermally cross-linked poly(methyl silsesquioxane) top layer for organic thin-film transistors is described. This gate dielectric design, coupled with compatible solution-processable semiconductor and conductor materials, has enabled fabrication of all solution-processed, high-performance organic thin-film transistors on flexible substrates. High field-effect mobility and current on/off ratio, together with other desirable transistor properties, are demonstrated.
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