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Title: Growth of ultrathin films of cadmium telluride and tellurium as studied by electrochemical atomic force microscopy. Author: Vidu R, Ku JR, Stroeve P. Journal: J Colloid Interface Sci; 2006 Aug 01; 300(1):404-12. PubMed ID: 16696994. Abstract: Time dependent, cathodic electrodeposition of ultrathin CdTe and Te films has been studied in 50 mM H(2)SO(4) + 1 mM CdSO(4) + 0.1 mM TeO(2) solutions at room temperature under potential control using electrochemical atomic force microscopy (EC-AFM). The films were also characterized electrochemically and with X-ray diffraction. The growth mechanism and the composition of the films depends on the applied potentials. Island-like growth mode was observed for CdTe films when the deposition potential was -0.35 V (SHE). At a more positive deposition potential of 0.138 V (SHE), Cd was not co-deposited into the film but affected the dynamic growth mode of the deposit. At this voltage smooth Te films were obtained. Depending on the applied potential, Cd acts either as a co-deposition element for CdTe film growth, or as a mediator for layer-by-layer growth of Te films.[Abstract] [Full Text] [Related] [New Search]