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  • Title: TaSi2 nanowires: A potential field emitter and interconnect.
    Author: Chueh YL, Ko MT, Chou LJ, Chen LJ, Wu CS, Chen CD.
    Journal: Nano Lett; 2006 Aug; 6(8):1637-44. PubMed ID: 16895349.
    Abstract:
    TaSi2 nanowires have been synthesized on a Si substrate by annealing NiSi2 films at 950 degrees C in an ambient containing Ta vapor. The nanowires could be grown up to 13 microm in length. Field-emission measurements show that the turn-on field is low at 4-4.5 V/microm and the threshold field is down to 6 V/microm with the field enhancement factor as high as 1800. The metallic TaSi2 nanowires exhibit excellent electrical properties with a remarkable high failure current density of 3 x 10(8) A cm(-2). In addition, effects of annealing temperatures and capability of metal silicide mediation layer on the growth of nanowires are addressed. This simple approach promises future applications in nanoelectronics and nano-optoelectronics.
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