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Title: Broadband ZnO single-nanowire light-emitting diode. Author: Bao J, Zimmler MA, Capasso F, Wang X, Ren ZF. Journal: Nano Lett; 2006 Aug; 6(8):1719-22. PubMed ID: 16895362. Abstract: We present a novel technique for reliable electrical injection into single semiconductor nanowires for light-emitting diodes and lasers. The method makes use of a high-resolution negative electron-beam resist and direct electron-beam patterning for the precise fabrication of a metallic top contact along the length of the nanowire, while a planar substrate is used as a bottom contact. It can be applied to any nanowire structure with an arbitrary cross section. We demonstrate this technique by constructing the first zinc oxide single-nanowire light-emitting diode. The device exhibits broad sub-bandgap emission at room temperature.[Abstract] [Full Text] [Related] [New Search]