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Title: Anisotropic magnetoresistance and anisotropic tunneling magnetoresistance due to quantum interference in ferromagnetic metal break junctions. Author: Bolotin KI, Kuemmeth F, Ralph DC. Journal: Phys Rev Lett; 2006 Sep 22; 97(12):127202. PubMed ID: 17025993. Abstract: We measure the low-temperature resistance of permalloy break junctions as a function of contact size and the magnetic field angle in applied fields large enough to saturate the magnetization. For both nanometer-scale metallic contacts and tunneling devices we observe large changes in resistance with the angle, as large as 25% in the tunneling regime. The pattern of magnetoresistance is sensitive to changes in bias on a scale of a few mV. We interpret the effect as a consequence of conductance fluctuations due to quantum interference.[Abstract] [Full Text] [Related] [New Search]