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  • Title: Interplay between fermi surface topology and ordering in URu2Si2 revealed through abrupt hall coefficient changes in strong magnetic fields.
    Author: Oh YS, Kim KH, Sharma PA, Harrison N, Amitsuka H, Mydosh JA.
    Journal: Phys Rev Lett; 2007 Jan 05; 98(1):016401. PubMed ID: 17358493.
    Abstract:
    Temperature- and field-dependent measurements of the Hall effect of pure and 4% Rh-doped URu2Si2 reveal low density (0.03 hole/U) high mobility carriers to be unique to the "hidden order" phase and consistent with an itinerant density-wave order parameter. The Fermi surface undergoes a series of abrupt changes as the magnetic field is increased. When combined with existing de Haas-van Alphen data, the Hall data expose a strong interplay between the stability of the "hidden order," the degree of polarization of the Fermi liquid, and the Fermi surface topology.
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