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Pubmed for Handhelds
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Title: Sensitivity and dynamic range of FGMOS dosemeters. Author: McNulty PJ, Poole KF, Crissler M, Reneau J, Cellere G, Paccagnella A, Visconti A, Bonanomi M, Stroebel D, Fennell M, Perez R. Journal: Radiat Prot Dosimetry; 2006; 122(1-4):460-2. PubMed ID: 17387126. Abstract: UVPROM memory devices employing FGMOS transistors as memory cells make excellent dosemeters for applications involving ionising radiation. With proper preparation and programming, these devices can be used in remote-sensing applications in high-radiation environments with no power required during exposure.[Abstract] [Full Text] [Related] [New Search]