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  • Title: Lateral self-aligned p-type In2O3 nanowire arrays epitaxially grown on Si substrates.
    Author: Hsin CL, He JH, Lee CY, Wu WW, Yeh PH, Chen LJ, Wang ZL.
    Journal: Nano Lett; 2007 Jun; 7(6):1799-803. PubMed ID: 17516681.
    Abstract:
    Lateral orientated growth of In2O3 nanowire (NW) and nanorod (NR) arrays has been achieved by a vapor transport and condensation method on (001) and (111) surfaces of Si substrates. The single crystalline In2O3 NWs and NRs were grown along [211] in parallel to the Si +/-[110] and lying in the substrate plane. The electrical measurements show that the In2O3 NWs are p-type semiconductor. By N+ doping, the resistivity of the In2O3 NWs has been tuned. The lateral self-aligned In2O3 NW and NR arrays on Si can offer some unique advantages for fabricating parallel nanodevices that can be integrated directly with silicon technology.
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