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  • Title: Fully transparent thin-film transistor devices based on SnO2 nanowires.
    Author: Dattoli EN, Wan Q, Guo W, Chen Y, Pan X, Lu W.
    Journal: Nano Lett; 2007 Aug; 7(8):2463-9. PubMed ID: 17595151.
    Abstract:
    We report on studies of field-effect transistor (FET) and transparent thin-film transistor (TFT) devices based on lightly Ta-doped SnO2 nano-wires. The nanowire-based devices exhibit uniform characteristics with average field-effect mobilities exceeding 100 cm2/V x s. Prototype nano-wire-based TFT (NW-TFT) devices on glass substrates showed excellent optical transparency and transistor performance in terms of transconductance, bias voltage range, and on/off ratio. High on-currents and field-effect mobilities were obtained from the NW-TFT devices even at low nanowire coverage. The SnO2 nanowire-based TFT approach offers a number of desirable properties such as low growth cost, high electron mobility, and optical transparency and low operation voltage, and may lead to large-scale applications of transparent electronics on diverse substrates.
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