These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


Pubmed for Handhelds

PUBMED FOR HANDHELDS

Search MEDLINE/PubMed

  • Title: Effect of temperature on the growth of InAs/GaAs quantum dots grown on a strained GaAs layer.
    Author: Ahmad I, Avrutin V, Morkoç H, Moore JC, Baski AA.
    Journal: J Nanosci Nanotechnol; 2007 Aug; 7(8):2889-93. PubMed ID: 17685312.
    Abstract:
    We have studied the effect of temperature on the growth of InAs quantum dots (QDs) grown on a strained GaAs layer. The 2.0 nm thick, strained GaAs was obtained by growing it on a relaxed In0.15Ga0.85As layer. We observed that the density of QDs grown in this manner strongly depends on the growth temperature. A change in the growth temperature from 510 degrees C to 460 degrees C resulted in a large increase in the QD density from 2.3 x 10(10) cm(-2) to 6.7 x 10(10) cm(-2) and a sharp reduction in their height from 8.0 nm to 3.0 nm. Photoluminescence (PL) results from these QDs are also presented.
    [Abstract] [Full Text] [Related] [New Search]