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  • Title: Three-dimensional morphology of GaP-GaAs nanowires revealed by transmission electron microscopy tomography.
    Author: Verheijen MA, Algra RE, Borgström MT, Immink G, Sourty E, Enckevort WJ, Vlieg E, Bakkers EP.
    Journal: Nano Lett; 2007 Oct; 7(10):3051-5. PubMed ID: 17887714.
    Abstract:
    We have investigated the morphology of heterostructured GaP-GaAs nanowires grown by metal-organic vapor-phase epitaxy as a function of growth temperature and V/III precursor ratio. The study of heterostructured nanowires with transmission electron microscopy tomography allowed the three-dimensional morphology to be resolved, and discrimination between the effect of axial (core) and radial (shell) growth on the morphology. A temperature- and precursor-dependent structure diagram for the GaP nanowire core morphology and the evolution of the different types of side facets during GaAs and GaP shell growth were constituted.
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