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  • Title: Directed growth of horizontally aligned gallium nitride nanowires for nanoelectromechanical resonator arrays.
    Author: Henry T, Kim K, Ren Z, Yerino C, Han J, Tang HX.
    Journal: Nano Lett; 2007 Nov; 7(11):3315-9. PubMed ID: 17941678.
    Abstract:
    We report the growth of horizontally aligned arrays and networks of GaN nanowires (NWs) as resonant components in nanoelectromechanical systems (NEMS). A combination of top-down selective area growth (SAG) and bottom-up vapor-liquid-solid (VLS) synthesis enables flexible fabrication of highly ordered nanowire arrays in situ with no postgrowth dispersion. Mechanical resonance of free-standing nanowires are measured, with quality factors (Q) ranging from 400 to 1000. We obtained a Young's modulus (E) of approximately 338 GPa from an array of NWs with varying diameters and lengths. The measurement allows detection of nanowire motion with a rotating frame and reveals dual fundamental resonant modes in two orthogonal planes. A universal ratio between the resonant frequencies of these two fundamental modes, irrespective of their dimensions, is observed and attributed to an isosceles cross section of GaN NWs.
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