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Title: Charge noise in liquid-gated single-wall carbon nanotube transistors. Author: Männik J, Heller I, Janssens AM, Lemay SG, Dekker C. Journal: Nano Lett; 2008 Feb; 8(2):685-8. PubMed ID: 18217786. Abstract: The noise properties of single-walled carbon nanotube transistors (SWNT-FETs) are essential for the performance of electronic circuits and sensors. Here, we investigate the mechanism responsible for the low-frequency noise in liquid-gated SWNT-FETs and its scaling with the length of the nanotube channel down to the nanometer scale. We show that the gate dependence of the noise amplitude provides strong evidence for a recently proposed charge-noise model. We find that the power of the charge noise scales as the inverse of the channel length of the SWNT-FET. Our measurements also show that surprisingly the ionic strength of the surrounding electrolyte has a minimal effect on the noise magnitude in SWNT-FETs.[Abstract] [Full Text] [Related] [New Search]