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  • Title: Dynamics of the photoexcited electron at the chromophore-semiconductor interface.
    Author: Prezhdo OV, Duncan WR, Prezhdo VV.
    Journal: Acc Chem Res; 2008 Feb; 41(2):339-48. PubMed ID: 18281950.
    Abstract:
    Electron dynamics at molecular-bulk interfaces play a central role in a number of different fields, including molecular electronics and sensitized semiconductor solar cells. Describing electron behavior in these systems is difficult because it requires a union between disparate interface components, molecules and solid-state materials, that are studied by two different communities, chemists and physicists, respectively. This Account describes recent theoretical efforts to bridge that gap by analyzing systems that serve as good general models of the interfacial electron dynamics. The particular systems that we examine, dyes attached to TiO2, are especially important since they represent the key component of dye-sensitized semiconductor solar cells, or Gratzel cells. Gratzel cells offer a cheap, efficient alternative to traditional Si-based solar cells. The chromophore-TiO2 interface is a remarkably good target for theorists because it has already been the subject of many excellent experimental investigations. The electron dynamics in the chromophore-semiconductor systems are surprisingly rich and involve a great variety of processes as illustrated in the scheme above. The exact rates and branching ratios depend on the system details, including the semiconductor type, its bulk phase, and its exposed surface, the chromophore type, the presence or absence of a chromophore-semiconductor bridge, the alignment of the chromophore and semiconductor energy levels, the surface termination, the active vibrational modes, the solvent, the type of electrolyte, the presence of surface defects, etc. Still, the general principles governing the electron dynamics at the bulk-semiconductor interface can be understood and formulated by considering a few specific examples. The ultrafast time scale of the electronic and vibrational processes at the molecule-bulk interface make it difficult to invoke traditional theories. Instead, we perform explicit time-domain simulations with an atomistic representation of the interface. This approach most directly mimics the time-resolved experimental data and provides a detailed description of the processes as they occur in real time. The simulations described in this Account take into consideration the chemical structure of the system, determine the role of the vibrational motion and non-adiabatic coupling, uncover a vast variety of electron dynamics scenarios, and ultimately, allow us to establish the basic criteria that provide an understanding of this complicated physical process. The insights attained in the theoretical studies let us formulate a number of practical suggestions for improving the properties of the dye-sensitized semiconductor solar cell and for controlling the electron transfer across molecular-bulk interfaces.
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