These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
Pubmed for Handhelds
PUBMED FOR HANDHELDS
Search MEDLINE/PubMed
Title: Inverted end-Hall-type low-energy high-current gaseous ion source. Author: Oks EM, Vizir AV, Shandrikov MV, Yushkov GY, Grishin DM, Anders A, Baldwin DA. Journal: Rev Sci Instrum; 2008 Feb; 79(2 Pt 2):02B302. PubMed ID: 18315168. Abstract: A novel approach to low-energy, high-current, gaseous ion beam generation was explored and an ion source based on this technique has been developed. The source utilizes a dc high-current (up to 20 A) gaseous discharge with electron injection into the region of ion generation. Compared to the conventional end-Hall ion source, the locations of the discharge anode and cathode are inverted: the cathode is placed inside the source and the anode outside, and correspondingly, the discharge current is in the opposite direction. The discharge operates in a diverging axial magnetic field, similar to the end-Hall source. Electron generation and injection is accomplished by using an additional arc discharge with a "cold" (filamentless) hollow cathode. Low plasma contamination is achieved by using a low discharge voltage (avoidance of sputtering), as well as by a special geometric configuration of the emitter discharge electrodes, thereby filtering (removing) the erosion products stemming from the emitter cathode. The device produces a dc ion flow with energy below 20 eV and current up to 2.5 A onto a collector of 500 cm(2) at 25 cm from the source edge, at a pressure > or =0.02 Pa and gas flow rate > or =14 SCCM. The ion energy spread is 2 to 3 eV (rms). The source is characterized by high reliability, low maintenance, and long lifetime. The beam contains less than 0.1% of metallic ions. The specific electric energy consumption is 400 eV per ion registered at the collector. The source operates with noble gases, nitrogen, oxygen, and hydrocarbons. Utilizing biasing, it can be used for plasma sputtering, etching, and other ion technologies.[Abstract] [Full Text] [Related] [New Search]