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Title: Comparison of the growth patterns of Si(n) and Ge(n) clusters (n = 25-33). Author: Zhao LZ, Lu WC, Qin W, Wang CZ, Ho KM. Journal: J Phys Chem A; 2008 Jul 03; 112(26):5815-23. PubMed ID: 18533643. Abstract: We performed an unbiased search for low-energy structures of medium-sized neutral Si n and Ge n clusters ( n = 25-33) using a genetic algorithm (GA) coupled with tight-binding interatomic potentials. Structural candidates obtained from our GA search were further optimized by first-principles calculations using density functional theory (DFT). Our approach reproduces well the lowest-energy structures of Si n and Ge n clusters of n = 25-29 compared to previous studies, showing the accuracy and reliability of our approach. In the present study, we pay more attention to determine low-lying isomers of Si n and Ge n ( n = 29-33) and study the growth patterns of these clusters. The B3LYP calculations suggest that the growth pattern of Si n ( n = 25-33) clusters undergoes a transition from prolate to cage at n = 31, while this transition appears at n = 26 from the PBE-calculated results. In the size range of 25-33, the corresponding Ge n clusters hold the prolate growth pattern. The relative stabilities and different structural motifs of Si n and Ge n ( n = 25-33) clusters were studied, and the changes of small cluster structures, when acting as building blocks of large clusters, were also discussed.[Abstract] [Full Text] [Related] [New Search]