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  • Title: Novel poly-silicon nanowire field effect transistor for biosensing application.
    Author: Hsiao CY, Lin CH, Hung CH, Su CJ, Lo YR, Lee CC, Lin HC, Ko FH, Huang TY, Yang YS.
    Journal: Biosens Bioelectron; 2009 Jan 01; 24(5):1223-9. PubMed ID: 18760914.
    Abstract:
    A simple and low-cost method to fabricate poly-silicon nanowire field effect transistor (poly-Si NW FET) for biosensing application was demonstrated. The poly-silicon nanowire (poly-Si NW) channel was fabricated by employing the poly-silicon (poly-Si) sidewall spacer technique, which approach was comparable with current commercial semiconductor process and forsaken expensive E-beam lithography tools. The electronic properties of the poly-Si NW FET in aqueous solution were found to be similar to those of single-crystal silicon nanowire field effect transistors reported in the literature. A model biotin and avidin/streptavidin sensing system was used to demonstrate the biosensing capacity of poly-Si NW FET. The changes of I(D)-V(G) curves were consistent with an n-type FET affected by a nearby negatively (streptavidin) and positively (avidin) charged molecules, respectively. Specific electric changes were observed for streptavidin and avidin sensing when nanowire surface of poly-Si NW FET was modified with biotin and streptavidin at sub pM to nM range could be distinguished. With its excellent electric properties and the potential for mass commercial production, poly-Si NW FET can be a very useful transducer for a variety of biosensing applications.
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