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Title: Ultrasensitive detection of dopamine using a polysilicon nanowire field-effect transistor. Author: Lin CH, Hsiao CY, Hung CH, Lo YR, Lee CC, Su CJ, Lin HC, Ko FH, Huang TY, Yang YS. Journal: Chem Commun (Camb); 2008 Nov 30; (44):5749-51. PubMed ID: 19009069. Abstract: An unprecedented high sensitive sensing of neurotransmitter dopamine at fM level was demonstrated using a poly-crystalline silicon nanowire field-effect transistor (poly-SiNW FET) fabricated by employing a simple and low-cost poly-Si sidewall spacer technique, which was compatible with current commercial semiconductor processes for large-scale standard manufacture.[Abstract] [Full Text] [Related] [New Search]