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Title: Single crystalline Ge(1-x)Mn(x) nanowires as building blocks for nanoelectronics. Author: van der Meulen MI, Petkov N, Morris MA, Kazakova O, Han X, Wang KL, Jacob AP, Holmes JD. Journal: Nano Lett; 2009 Jan; 9(1):50-6. PubMed ID: 19032036. Abstract: Magnetically doped Si and Ge nanowires have potential application in future nanowire spin-based devices. Here, we report a supercritical fluid method for producing single crystalline Mn-doped Ge nanowires with a Mn-doping concentration of between 0.5-1.0 atomic % that display ferromagnetism above 300 K and a superior performance with respect to the hole mobility of around 340 cm(2)/Vs, demonstrating the potential of using these nanowires as building blocks for electronic devices.[Abstract] [Full Text] [Related] [New Search]