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  • Title: Stacking-faults-free zinc Blende GaAs nanowires.
    Author: Shtrikman H, Popovitz-Biro R, Kretinin A, Heiblum M.
    Journal: Nano Lett; 2009 Jan; 9(1):215-9. PubMed ID: 19093840.
    Abstract:
    Stacking-faults-free zinc blende GaAs nanowires have been grown by molecular beam epitaxy using the vapor-liquid-solid gold assisted growth method. Two different approaches were used to obtain continuous low supersaturation in the vicinity of the growing wires. A double distribution of gold droplets on the (111)B surface in the first case, and a highly terraced (311)B growth surface in the second case both avoided the commonly observed transition to wurtzite structure.
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