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  • Title: Tunable surface band gap in Mg(x)Zn(1-x)O thin films.
    Author: Xue M, Guo Q, Wu K, Guo J.
    Journal: J Chem Phys; 2008 Dec 21; 129(23):234707. PubMed ID: 19102552.
    Abstract:
    Mg(x)Zn(1-x)O thin films epitaxially grown on Mo(110) substrate under ultrahigh vacuum condition were studied in situ by various surface analysis techniques including x-ray photoelectron spectroscopy, Auger electron spectroscopy, low-energy electron diffraction, and high resolution electron energy loss spectroscopy. The results indicate that as-grown Mg(x)Zn(1-x)O films are soluble phase, and a phase transition from wurtzite to cubic structure occurs in the region of x = 0.55-0.67. The surface band gap can be tuned continuously with altering the content of Mg in Mg(x)Zn(1-x)O films, and its tunable window width is about 1.9 eV. Based on heterojunction and quantum well structure, this kind of materials can be applied in wide-band-gap semiconductor devices, such as short-wavelength light-emitting devices.
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