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  • Title: GaAs core--shell nanowires for photovoltaic applications.
    Author: Czaban JA, Thompson DA, LaPierre RR.
    Journal: Nano Lett; 2009 Jan; 9(1):148-54. PubMed ID: 19143502.
    Abstract:
    We report the use of Te as an n-type dopant in GaAs core-shell p-n junction nanowires for use in photovoltaic devices. Te produced significant change in the morphology of GaAs nanowires grown by the vapor-liquid-solid process in a molecular beam epitaxy system. The increase in radial growth of nanowires due to the surfactant effect of Te had a significant impact on the operating characteristics of photovoltaic devices. A decrease in solar cell efficiency occurred when the Te-doped GaAs growth duration was increased.
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