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  • Title: Preparation of phosphorus doped hydrogenated microcrystalline silicon thin films by inductively coupled plasma chemical vapor deposition and their characteristics for solar cell applications.
    Author: Jeong C, Boo S, Kim TW, Choi BH, Kim HS, Chang DR, Lee JH, Kamisako K.
    Journal: J Nanosci Nanotechnol; 2008 Oct; 8(10):5521-6. PubMed ID: 19198490.
    Abstract:
    Intrinsic and phosphorus-doped hydrogenated microcrystalline silicon (microc-Si:H) films were prepared using inductively coupled plasma chemical vapor deposition (ICP-CVD) method. Structural, electrical and optical properties of these films were studied as a function of silane concentration, ICP source power and PH3/SiH4 gas ratio. Characterization of these films from Raman spectroscopy and X-ray diffraction revealed that the conductive film exists in microcrystalline phase embedded in an amorphous network. The condition of electrical properties (sigma(d): approximately 10(-7) S/cm, sigma(ph): approximately 10(-4) S/cm) and activation energy (0.55 eV), satisfied with properties of intrinsic microc-Si:H, was obtained at 1200 W of ICP power and 2% of silane concentration, respectively. At PH3/SiH4 gas ratio of 0.09%, dark conductivity has a maximum value of approximately 18.5 S/cm and optical bandgap also a maximum value of approximately 2.39 eV. The deposition rate was not satisfactory (4.9 angstroms/s) at same condition.
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