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Title: Performance and photovoltaic response of polymer-doped carbon nanotube p-n diodes. Author: Abdula D, Shim M. Journal: ACS Nano; 2008 Oct 28; 2(10):2154-9. PubMed ID: 19206462. Abstract: Two terminal abrupt junction diodes are fabricated from single semiconducting carbon nanotubes with simple photopatterned polymer layers defining air-stable p- and n-regions. These intratube diodes show nearly ideal behavior with relatively low series resistance and no sign of Zener breakdown at room temperature. Spatial doping profiles measured by micro-Raman spectroscopy and selective electrochemical gating of the n-region indicate that diode performance depends strongly on relative doping levels. A short circuit current of 1.4 nA with an open circuit voltage of 205 mV are measured when illuminated to saturation.[Abstract] [Full Text] [Related] [New Search]