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  • Title: Growth and characterization of wurtzite GaAs nanowires with defect-free zinc blende GaAsSb inserts.
    Author: Dheeraj DL, Patriarche G, Zhou H, Hoang TB, Moses AF, Grønsberg S, van Helvoort AT, Fimland BO, Weman H.
    Journal: Nano Lett; 2008 Dec; 8(12):4459-63. PubMed ID: 19367852.
    Abstract:
    We have demonstrated the growth of a unique wurtzite (WZ) GaAs nanowire (NW) with a zinc blende (ZB) GaAsSb insert by Au-assisted molecular beam epitaxy. An abrupt interface from the WZ GaAs phase to the ZB GaAsSb phase was observed, whereas an intermediate segment of a 4H polytype GaAs phase was found directly above the ZB GaAsSb insert. A possible mechanism for the different phase transitions is discussed. Furthermore, low temperature microphotoluminescence (micro-PL) measurements showed evidence of quantum confinement of holes in the GaAsSb insert.
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