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  • Title: Room temperature continuous wave operation of InAs/GaAs quantum dot photonic crystal nanocavity laser on silicon substrate.
    Author: Tanabe K, Nomura M, Guimard D, Iwamoto S, Arakawa Y.
    Journal: Opt Express; 2009 Apr 27; 17(9):7036-42. PubMed ID: 19399078.
    Abstract:
    Room temperature, continuous-wave lasing in a quantum dot photonic crystal nanocavity on a Si substrate has been demonstrated by optical pumping. The laser was an air-bridge structure of a two-dimensional photonic crystal GaAs slab with InAs quantum dots inside on a Si substrate fabricated through wafer bonding and layer transfer. This surface-emitting laser exhibited emission at 1.3 microm with a threshold absorbed power of 2 microW, the lowest out of any type of lasers on silicon.
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