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  • Title: Superhard semiconducting optically transparent high pressure phase of boron.
    Author: Zarechnaya EY, Dubrovinsky L, Dubrovinskaia N, Filinchuk Y, Chernyshov D, Dmitriev V, Miyajima N, El Goresy A, Braun HF, Van Smaalen S, Kantor I, Kantor A, Prakapenka V, Hanfland M, Mikhaylushkin AS, Abrikosov IA, Simak SI.
    Journal: Phys Rev Lett; 2009 May 08; 102(18):185501. PubMed ID: 19518885.
    Abstract:
    An orthorhombic (space group Pnnm) boron phase was synthesized at pressures above 9 GPa and high temperature, and it was demonstrated to be stable at least up to 30 GPa. The structure, determined by single-crystal x-ray diffraction, consists of B12 icosahedra and B2 dumbbells. The charge density distribution obtained from experimental data and ab initio calculations suggests covalent chemical bonding in this phase. Strong covalent interatomic interactions explain the low compressibility value (bulk modulus is K300=227 GPa) and high hardness of high-pressure boron (Vickers hardness HV=58 GPa), after diamond the second hardest elemental material.
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